Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si
Abstract
ZnSiP2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1423187
- Report Number(s):
- NREL/JA-5J00-70613
Journal ID: ISSN 2050-7526; JMCCCX; TRN: US1801717
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Materials Chemistry C
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2050-7526
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; band gap materials; optoelectronic materials and devices; multijunction photovoltaics; chemical vapor deposition; thin films
Citation Formats
Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., and Tamboli, Adele C.. Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si. United States: N. p., 2018.
Web. doi:10.1039/C7TC05545E.
Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., & Tamboli, Adele C.. Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si. United States. https://doi.org/10.1039/C7TC05545E
Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., and Tamboli, Adele C.. Tue .
"Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si". United States. https://doi.org/10.1039/C7TC05545E. https://www.osti.gov/servlets/purl/1423187.
@article{osti_1423187,
title = {Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si},
author = {Martinez, Aaron D. and Miller, Elisa M. and Norman, Andrew G. and Schnepf, Rekha R. and Leick, Noemi and Perkins, Craig and Stradins, Paul and Toberer, Eric S. and Tamboli, Adele C.},
abstractNote = {ZnSiP2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.},
doi = {10.1039/C7TC05545E},
journal = {Journal of Materials Chemistry C},
number = 11,
volume = 6,
place = {United States},
year = {2018},
month = {1}
}
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Cited by: 15 works
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Works referencing / citing this record:
A new family of cation-disordered Zn(Cu)–Si–P compounds as high-performance anodes for next-generation Li-ion batteries
journal, January 2019
- Li, Wenwu; Li, Xinwei; Liao, Jun
- Energy & Environmental Science, Vol. 12, Issue 7
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