Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si

Martinez, Aaron D.; Miller, Elisa M.; Norman, Andrew G.; Schnepf, Rekha R.; Leick, Noemi; Perkins, Craig; Stradins, Paul; Toberer, Eric S.; Tamboli, Adele C.

doi:10.1039/C7TC05545E

Title: Growth of amorphous and epitaxial ZnSiP₂–Si alloys on Si

Abstract

ZnSiP₂is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP₂–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.

Authors:

^[1];

^[2]; Norman, Andrew G. ^[2]; Schnepf, Rekha R. ^[1]; Leick, Noemi ^[2]; Perkins, Craig ^[2]; Stradins, Paul ^[1];

^[1];

^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: 2018-01-30

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1423187

Report Number(s):: NREL/JA-5J00-70613
Journal ID: ISSN 2050-7526; JMCCCX; TRN: US1801717

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Materials Chemistry C

Additional Journal Information:: Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2050-7526

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; band gap materials; optoelectronic materials and devices; multijunction photovoltaics; chemical vapor deposition; thin films

Citation Formats


                    Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., and Tamboli, Adele C.. Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si.  United States: N. p., 2018. 
Web.  doi:10.1039/C7TC05545E.

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                    Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., & Tamboli, Adele C.. Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si.  United States.  https://doi.org/10.1039/C7TC05545E

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                    Martinez, Aaron D., Miller, Elisa M., Norman, Andrew G., Schnepf, Rekha R., Leick, Noemi, Perkins, Craig, Stradins, Paul, Toberer, Eric S., and Tamboli, Adele C.. Tue .  
"Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si".  United States.  https://doi.org/10.1039/C7TC05545E.  https://www.osti.gov/servlets/purl/1423187.

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@article{osti_1423187,

  title        = {Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si},

  author       = {Martinez, Aaron D. and Miller, Elisa M. and Norman, Andrew G. and Schnepf, Rekha R. and Leick, Noemi and Perkins, Craig and Stradins, Paul and Toberer, Eric S. and Tamboli, Adele C.},

  abstractNote = {ZnSiP2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP2–Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.},

  doi          = {10.1039/C7TC05545E},

  journal      = {Journal of Materials Chemistry C},

  number       = 11,

  volume       = 6,

  place        = {United States},

  year         = {2018},

  month        = {1}

}

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Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

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https://doi.org/10.1039/C7TC05545E

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Cited by: 15 works

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Figures / Tables:

Figure 1: The growth technique employed here uses a combination of hot wire chemical vapor deposition and an effusion cell for metallic Zn. In this study, the substrates were not intentionally heated, but the hot wires result in heating to 100–200 °C.

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Works referenced in this record:

Kramers–Kronig constrained variational analysis of optical spectra
journal, August 2005

Kuzmenko, A. B.
Review of Scientific Instruments, Vol. 76, Issue 8
DOI: 10.1063/1.1979470

Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH ₃ surface preparation
journal, August 2015

Warren, Emily L.; Kibbler, Alan E.; France, Ryan M.
Applied Physics Letters, Vol. 107, Issue 8
DOI: 10.1063/1.4929714

Development of ZnSiP$_{\mathbf 2}$ for Si-Based Tandem Solar Cells
journal, January 2015

Martinez, Aaron D.; Ortiz, Brenden R.; Johnson, Nicole E.
IEEE Journal of Photovoltaics, Vol. 5, Issue 1
DOI: 10.1109/JPHOTOV.2014.2362305

Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate
journal, March 2010

Martin, Ina T.; Teplin, Charles W.; Doyle, James R.
Journal of Applied Physics, Vol. 107, Issue 5
DOI: 10.1063/1.3298455

Optical, electrical, and photoelectrical properties of sputtered thin amorphous Zn ₃ P ₂ films
journal, June 1994

Weber, A.; Sutter, P.; von Känel, H.
Journal of Applied Physics, Vol. 75, Issue 11
DOI: 10.1063/1.356613

The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane
journal, September 2001

Duan, H. L.; Zaharias, G. A.; Bent, Stacey F.
Thin Solid Films, Vol. 395, Issue 1-2
DOI: 10.1016/S0040-6090(01)01203-2

Surfactant-assisted growth of CdS thin films for photovoltaic applications
journal, May 2006

Perkins, Craig L.; Hasoon, Falah S.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, Issue 3
DOI: 10.1116/1.2194929

Parameterization of the dielectric function of semiconductor nanocrystals
journal, November 2014

Petrik, P.
Physica B: Condensed Matter, Vol. 453
DOI: 10.1016/j.physb.2014.03.065

In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
journal, February 2016

Leick, N.; Weber, J. W.; Mackus, A. J. M.
Journal of Physics D: Applied Physics, Vol. 49, Issue 11
DOI: 10.1088/0022-3727/49/11/115504

Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
journal, April 2013

Grassman, T. J.; Carlin, J. A.; Galiana, B.
Applied Physics Letters, Vol. 102, Issue 14
DOI: 10.1063/1.4801498

Metamorphic epitaxy for multijunction solar cells
journal, March 2016

France, Ryan M.; Dimroth, Frank; Grassman, Tyler J.
MRS Bulletin, Vol. 41, Issue 3
DOI: 10.1557/mrs.2016.25

The preparation and growth of polycrystalline layers of ZnSiP2 in an open flow system
journal, February 1970

Curtis, B. J.; Wild, P.
Materials Research Bulletin, Vol. 5, Issue 2
DOI: 10.1016/0025-5408(70)90128-5

Dielectric function representation by B-splines
journal, April 2008

Johs, Blaine; Hale, Jeffrey S.
physica status solidi (a), Vol. 205, Issue 4
DOI: 10.1002/pssa.200777754

Characterization of vacuum grown thin films of ZnSnP2
journal, May 1987

Shin, H. Y.; Ajmera, P. K.
Materials Letters, Vol. 5, Issue 5-6
DOI: 10.1016/0167-577X(87)90012-7

Epitaxial growth of solid solutions of ZnSiP2 in Si
journal, July 1972

Popov, V. P.; Pamplin, B. R.
Journal of Crystal Growth, Vol. 15, Issue 2
DOI: 10.1016/0022-0248(72)90134-0

Polar-on-nonpolar epitaxy
journal, February 1987

Kroemer, Herbert
Journal of Crystal Growth, Vol. 81, Issue 1-4
DOI: 10.1016/0022-0248(87)90391-5

Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases
journal, July 2017

Kang, Joongoo; Park, Ji-Sang; Stradins, Pauls
Physical Review B, Vol. 96, Issue 4
DOI: 10.1103/PhysRevB.96.045203

Optical Spectra and Energy Band Structure of the Monoclinic Crystals ZnP2 and ZnAs2
journal, June 1972

Sobolev, V. V.; Syrbu, N. N.
Physica Status Solidi (b), Vol. 51, Issue 2
DOI: 10.1002/pssb.2220510244

Solar energy conversion properties and defect physics of ZnSiP$_2$
text, January 2015

Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun
arXiv
DOI: 10.48550/arxiv.1506.05371

Works referencing / citing this record:

A new family of cation-disordered Zn(Cu)–Si–P compounds as high-performance anodes for next-generation Li-ion batteries
journal, January 2019

Li, Wenwu; Li, Xinwei; Liao, Jun
Energy & Environmental Science, Vol. 12, Issue 7
DOI: 10.1039/c9ee00953a

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Similar Records

Title: Growth of amorphous and epitaxial ZnSiP2–Si alloys on Si

Abstract

Citation Formats

Figures / Tables:

Kramers–Kronig constrained variational analysis of optical spectra journal, August 2005

Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH 3 surface preparation journal, August 2015

Development of ZnSiP$_{\mathbf 2}$ for Si-Based Tandem Solar Cells journal, January 2015

Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate journal, March 2010

Optical, electrical, and photoelectrical properties of sputtered thin amorphous Zn 3 P 2 films journal, June 1994

The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane journal, September 2001

Surfactant-assisted growth of CdS thin films for photovoltaic applications journal, May 2006

Parameterization of the dielectric function of semiconductor nanocrystals journal, November 2014

In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd journal, February 2016

Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition journal, April 2013

Metamorphic epitaxy for multijunction solar cells journal, March 2016

The preparation and growth of polycrystalline layers of ZnSiP2 in an open flow system journal, February 1970

Dielectric function representation by B-splines journal, April 2008

Characterization of vacuum grown thin films of ZnSnP2 journal, May 1987

Epitaxial growth of solid solutions of ZnSiP2 in Si journal, July 1972

Polar-on-nonpolar epitaxy journal, February 1987

Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases journal, July 2017

Optical Spectra and Energy Band Structure of the Monoclinic Crystals ZnP2 and ZnAs2 journal, June 1972

Solar energy conversion properties and defect physics of ZnSiP$_2$ text, January 2015

A new family of cation-disordered Zn(Cu)–Si–P compounds as high-performance anodes for next-generation Li-ion batteries journal, January 2019

Title: Growth of amorphous and epitaxial ZnSiP₂–Si alloys on Si

Kramers–Kronig constrained variational analysis of optical spectra
journal, August 2005

Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH ₃ surface preparation
journal, August 2015

Development of ZnSiP$_{\mathbf 2}$ for Si-Based Tandem Solar Cells
journal, January 2015

Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate
journal, March 2010

Optical, electrical, and photoelectrical properties of sputtered thin amorphous Zn ₃ P ₂ films
journal, June 1994

The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane
journal, September 2001

Surfactant-assisted growth of CdS thin films for photovoltaic applications
journal, May 2006

Parameterization of the dielectric function of semiconductor nanocrystals
journal, November 2014

In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
journal, February 2016

Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
journal, April 2013

Metamorphic epitaxy for multijunction solar cells
journal, March 2016

The preparation and growth of polycrystalline layers of ZnSiP2 in an open flow system
journal, February 1970

Dielectric function representation by B-splines
journal, April 2008

Characterization of vacuum grown thin films of ZnSnP2
journal, May 1987

Epitaxial growth of solid solutions of ZnSiP2 in Si
journal, July 1972

Polar-on-nonpolar epitaxy
journal, February 1987

Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases
journal, July 2017

Optical Spectra and Energy Band Structure of the Monoclinic Crystals ZnP2 and ZnAs2
journal, June 1972

Solar energy conversion properties and defect physics of ZnSiP$_2$
text, January 2015

A new family of cation-disordered Zn(Cu)–Si–P compounds as high-performance anodes for next-generation Li-ion batteries
journal, January 2019