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Title: Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics

Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxide materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.
Authors:
ORCiD logo [1] ; ORCiD logo [1] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1]
  1. Colorado State Univ., Fort Collins, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5900-70431
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 8; Journal Issue: 2; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; passivation; II-VI semiconductor materials; cadmium compounds; aluminum oxide; sputtering; photovoltaic systems
OSTI Identifier:
1422874

Kephart, Jason M., Kindvall, Anna, Williams, Desiree, Kuciauskas, Darius, Dippo, Pat, Munshi, Amit, and Sampath, W. S.. Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics. United States: N. p., Web. doi:10.1109/JPHOTOV.2017.2787021.
Kephart, Jason M., Kindvall, Anna, Williams, Desiree, Kuciauskas, Darius, Dippo, Pat, Munshi, Amit, & Sampath, W. S.. Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics. United States. doi:10.1109/JPHOTOV.2017.2787021.
Kephart, Jason M., Kindvall, Anna, Williams, Desiree, Kuciauskas, Darius, Dippo, Pat, Munshi, Amit, and Sampath, W. S.. 2018. "Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics". United States. doi:10.1109/JPHOTOV.2017.2787021.
@article{osti_1422874,
title = {Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics},
author = {Kephart, Jason M. and Kindvall, Anna and Williams, Desiree and Kuciauskas, Darius and Dippo, Pat and Munshi, Amit and Sampath, W. S.},
abstractNote = {Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxide materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.},
doi = {10.1109/JPHOTOV.2017.2787021},
journal = {IEEE Journal of Photovoltaics},
number = 2,
volume = 8,
place = {United States},
year = {2018},
month = {1}
}