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Title: Defect specific luminescence dead layers in CdS and CdSe

Abstract

CdS and CdSe are often used in optoelectronic devices whose effectiveness is may be dictated by defects in the near surface region. Luminescence is one of the main tools for studying such defects. The energy dependence of the x-ray excited optical luminescence (XEOL) spectra of these materials enables the extraction of the depth dependence of the defect distribution. Normal and time-gated XEOL spectra were obtained from these materials in the energy range 600 to 1500 eV. Here, we find that the results can best be understood in terms of a luminescence dead layer whose width depends on the position of the defect level in the band gap.

Authors:
 [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1422776
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Canadian Journal of Chemistry
Additional Journal Information:
Journal Volume: 95; Journal Issue: 11; Journal ID: ISSN 0008-4042
Publisher:
NRC Research Press
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Rosenberg, R. A. Defect specific luminescence dead layers in CdS and CdSe. United States: N. p., 2017. Web. doi:10.1139/cjc-2017-0126.
Rosenberg, R. A. Defect specific luminescence dead layers in CdS and CdSe. United States. doi:10.1139/cjc-2017-0126.
Rosenberg, R. A. Fri . "Defect specific luminescence dead layers in CdS and CdSe". United States. doi:10.1139/cjc-2017-0126. https://www.osti.gov/servlets/purl/1422776.
@article{osti_1422776,
title = {Defect specific luminescence dead layers in CdS and CdSe},
author = {Rosenberg, R. A.},
abstractNote = {CdS and CdSe are often used in optoelectronic devices whose effectiveness is may be dictated by defects in the near surface region. Luminescence is one of the main tools for studying such defects. The energy dependence of the x-ray excited optical luminescence (XEOL) spectra of these materials enables the extraction of the depth dependence of the defect distribution. Normal and time-gated XEOL spectra were obtained from these materials in the energy range 600 to 1500 eV. Here, we find that the results can best be understood in terms of a luminescence dead layer whose width depends on the position of the defect level in the band gap.},
doi = {10.1139/cjc-2017-0126},
journal = {Canadian Journal of Chemistry},
number = 11,
volume = 95,
place = {United States},
year = {2017},
month = {4}
}

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