Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures

Huang, Shuo; Volynets, Vladimir; Hamilton, James R.; Nam, Sang Ki; Song, In-Cheol; Lu, Siqing; Tennyson, Jonathan; Kushner, Mark J.

doi:10.1116/1.5019673

Title: Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF ₃ /O ₂ mixtures

Journal Article · 01 March 2018 · Journal of Vacuum Science and Technology A

DOI: https://doi.org/10.1116/1.5019673 · OSTI ID:1422654

Huang, Shuo ^[1]; Volynets, Vladimir ^[2]; Hamilton, James R. ^[3]; Nam, Sang Ki ^[2]; Song, In-Cheol ^[2]; Lu, Siqing ^[2]; Tennyson, Jonathan ^[3]; Kushner, Mark J. ^[1]

Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122
Samsung Electronics Co., Ltd., 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-742, South Korea
Department of Physics and Astronomy, University College London, London WC1E 6BT, United Kingdom

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0014132

OSTI ID:: 1422654

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 2 Vol. 36; ISSN 0734-2101

Publisher:: American Vacuum SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF ₃ /O ₂ mixtures