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This content will become publicly available on February 26, 2019

Title: Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures

Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [2] ;  [2] ;  [3] ;  [1]
  1. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122
  2. Samsung Electronics Co., Ltd., 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-742, South Korea
  3. Department of Physics and Astronomy, University College London, London WC1E 6BT, United Kingdom
Publication Date:
Grant/Contract Number:
SC0001319
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Volume: 36 Journal Issue: 2; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1422654