Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures

Huang, Shuo; Volynets, Vladimir; Hamilton, James R.; Nam, Sang Ki; Song, In-Cheol; Lu, Siqing; Tennyson, Jonathan; Kushner, Mark J.

doi:10.1116/1.5019673

Title: Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF ₃ /O ₂ mixtures

Authors:

Huang, Shuo ^[1]; Volynets, Vladimir ^[2]; Hamilton, James R. ^[3]; Nam, Sang Ki ^[2]; Song, In-Cheol ^[2]; Lu, Siqing ^[2]; Tennyson, Jonathan ^[3]; Kushner, Mark J. ^[1]

Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122
Samsung Electronics Co., Ltd., 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-742, South Korea
Department of Physics and Astronomy, University College London, London WC1E 6BT, United Kingdom

Publication Date:: 2018-03-01

Sponsoring Org.:: USDOE

OSTI Identifier:: 1422654

Grant/Contract Number:: SC0001319

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology A

Additional Journal Information:: Journal Name: Journal of Vacuum Science and Technology A Journal Volume: 36 Journal Issue: 2; Journal ID: ISSN 0734-2101

Publisher:: American Vacuum Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Huang, Shuo, Volynets, Vladimir, Hamilton, James R., Nam, Sang Ki, Song, In-Cheol, Lu, Siqing, Tennyson, Jonathan, and Kushner, Mark J. Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures.  United States: N. p., 2018. 
Web.  doi:10.1116/1.5019673.

Copy to clipboard


                    Huang, Shuo, Volynets, Vladimir, Hamilton, James R., Nam, Sang Ki, Song, In-Cheol, Lu, Siqing, Tennyson, Jonathan, & Kushner, Mark J. Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures.  United States.  https://doi.org/10.1116/1.5019673

Copy to clipboard


                    Huang, Shuo, Volynets, Vladimir, Hamilton, James R., Nam, Sang Ki, Song, In-Cheol, Lu, Siqing, Tennyson, Jonathan, and Kushner, Mark J. Thu .  
"Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures".  United States.  https://doi.org/10.1116/1.5019673.

Copy to clipboard


                    
@article{osti_1422654,

  title        = {Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures},

  author       = {Huang, Shuo and Volynets, Vladimir and Hamilton, James R. and Nam, Sang Ki and Song, In-Cheol and Lu, Siqing and Tennyson, Jonathan and Kushner, Mark J.},

  abstractNote = {},

  doi          = {10.1116/1.5019673},

  journal      = {Journal of Vacuum Science and Technology A},

  number       = 2,

  volume       = 36,

  place        = {United States},

  year         = {2018},

  month        = {3}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1116/1.5019673

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 16 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Insights to scaling remote plasma sources sustained in NF 3 mixtures
journal, May 2017

Huang, Shuo; Volynets, Vladimir; Hamilton, James R.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 3
DOI: 10.1116/1.4978551

Inductively Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Robust, Reliable, and Fine Conductor Etching
journal, September 2009

Banna, S.; Agarwal, A.; Tokashiki, K.
IEEE Transactions on Plasma Science, Vol. 37, Issue 9
DOI: 10.1109/TPS.2009.2028071

Modeling Chemical Downstream Etch Systems for NF 3 / O 2 Mixtures
journal, January 1997

Meeks, E.; Larson, R. S.; Vosen, S. R.
Journal of The Electrochemical Society, Vol. 144, Issue 1
DOI: 10.1149/1.1837410

Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
journal, November 2015

Heo, Seung Chan; Lim, Donghwan; Jung, Woo Suk
Microelectronic Engineering, Vol. 147
DOI: 10.1016/j.mee.2015.04.059

Control of electron energy distributions and plasma characteristics of dual frequency, pulsed capacitively coupled plasmas sustained in Ar and Ar/CF ₄ /O ₂
journal, October 2012

Song, Sang-Heon; Kushner, Mark J.
Plasma Sources Science and Technology, Vol. 21, Issue 5
DOI: 10.1088/0963-0252/21/5/055028

Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF₃ into N₂ Downflow Plasma
journal, February 2012

Hayashi, Toshio; Ishikawa, Kenji; Sekine, Makoto
Japanese Journal of Applied Physics, Vol. 51, Issue 2R
DOI: 10.1143/JJAP.51.026505

Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition
journal, October 2012

Lee, Jaesang; Lee, Seung Jae; Han, Won Bae
physica status solidi (a), Vol. 210, Issue 2
DOI: 10.1002/pssa.201228671

Enhanced dielectric deposition on single-layer MoS₂ with low damage using remote N₂ plasma treatment
journal, April 2017

Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan
Nanotechnology, Vol. 28, Issue 17
DOI: 10.1088/1361-6528/aa6756

Hybrid modelling of low temperature plasmas for fundamental investigations and equipment design
journal, September 2009

Kushner, Mark J.
Journal of Physics D: Applied Physics, Vol. 42, Issue 19
DOI: 10.1088/0022-3727/42/19/194013

Thin layer etching of silicon nitride: A comprehensive study of selective removal using NH ₃ /NF ₃ remote plasma
journal, November 2016

Posseme, N.; Ah-Leung, V.; Pollet, O.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 6
DOI: 10.1116/1.4963072

Chemical dry etching of silicon nitride and silicon dioxide using CF ₄ /O ₂ /N ₂ gas mixtures
journal, September 1996

Kastenmeier, B. E. E.; Matsuo, P. J.; Beulens, J. J.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 14, Issue 5
DOI: 10.1116/1.580203

Electronic structure of the radicals NF and NCI. I. Potential energy curves for NF
journal, October 1985

Bettendorff, Marc; Peyerimhoff, Sigrid D.
Chemical Physics, Vol. 99, Issue 1
DOI: 10.1016/0301-0104(85)80109-9

Remote H₂/N₂ plasma processes for simultaneous preparation of low-k interlayer dielectric and interconnect copper surfaces
journal, May 2012

Liu, Xin; Gill, Sandeep; Tang, Fu
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 30, Issue 3
DOI: 10.1116/1.4705732

Silicon etching in NF3/O2 remote microwave plasmas
journal, September 1999

Matsuo, P. J.; Kastenmeier, B. E. E.; Oehrlein, G. S.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 5
DOI: 10.1116/1.581979

Simulation of Chemical Downstream Etch Systems: Correlation of the Effects of Operating Conditions on Wafer Etch Rate and Uniformity
journal, April 1997

Vosen, S. R.; Meeks, E.; Larson, R. S.
Journal of The Electrochemical Society, Vol. 144, Issue 4
DOI: 10.1149/1.1837620

Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas
journal, January 2001

Kastenmeier, B. E. E.; Matsuo, P. J.; Oehrlein, G. S.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 1
DOI: 10.1116/1.1329118

Free Electron Attachment and Rydberg Electron Transfer to NF₃Molecules and Clusters
journal, December 1997

Ruckhaberle, Nike; Lehmann, Lars; Matejcik, Stefan
The Journal of Physical Chemistry A, Vol. 101, Issue 51
DOI: 10.1021/jp972422+

Damage‐free selective etching of Si native oxides using NH ₃ /NF ₃ and SF ₆ /H ₂ O down‐flow etching
journal, July 1993

Nishino, H.; Hayasaka, N.; Okano, H.
Journal of Applied Physics, Vol. 74, Issue 2
DOI: 10.1063/1.354890

Role of nitrogen in the downstream etching of silicon nitride
journal, July 1996

Blain, M. G.; Meisenheimer, T. L.; Stevens, J. E.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 14, Issue 4
DOI: 10.1116/1.580039

Remote Plasma Oxidation and Atomic Layer Etching of MoS ₂
journal, July 2016

Zhu, Hui; Qin, Xiaoye; Cheng, Lanxia
ACS Applied Materials & Interfaces, Vol. 8, Issue 29
DOI: 10.1021/acsami.6b04719

Quantum Chemical Investigation for Chemical Dry Etching of SiO₂ by Flowing NF₃ into H₂ Downflow Plasma
journal, December 2011

Hayashi, Toshio; Ishikawa, Kenji; Sekine, Makoto
Japanese Journal of Applied Physics, Vol. 51, Issue 1R
DOI: 10.1143/JJAP.51.016201

Investigations of surface reactions during C2F6 plasma etching of SiO2 with equipment and feature scale models
journal, March 2001

Zhang, Da; Kushner, Mark J.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 2
DOI: 10.1116/1.1349728

Electron–molecule collision calculations using the R-matrix method
journal, June 2010

Tennyson, Jonathan
Physics Reports, Vol. 491, Issue 2-3
DOI: 10.1016/j.physrep.2010.02.001

Role of NO in highly selective SiN/SiO ₂ and SiN/Si etching with NF ₃ /O ₂ remote plasma: Experiment and simulation
journal, November 2017

Barsukov, Yuri; Volynets, Vladimir; Lee, Sangjun
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 6
DOI: 10.1116/1.5004546

Calculated cross sections for electron collisions with NF₃, NF₂and NF with applications to remote plasma sources
journal, May 2017

Hamilton, James R.; Tennyson, Jonathan; Huang, Shuo
Plasma Sources Science and Technology, Vol. 26, Issue 6
DOI: 10.1088/1361-6595/aa6bdf

Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures
journal, July 1998

Kastenmeier, B. E. E.; Matsuo, P. J.; Oehrlein, G. S.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 4
DOI: 10.1116/1.581309

Native Oxide Removal on Si Surfaces by N F ₃ -Added Hydrogen and Water Vapor Plasma Downstream Treatment
journal, April 1994

Kikuchi, Jun; Iga, Masao; Ogawa, Hiroki
Japanese Journal of Applied Physics, Vol. 33, Issue Part 1, No. 4B
DOI: 10.1143/JJAP.33.2207

Plasma etching: Yesterday, today, and tomorrow
journal, September 2013

Donnelly, Vincent M.; Kornblit, Avinoam
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5
DOI: 10.1116/1.4819316

Similar Records in DOE PAGES and OSTI.GOV collections:

Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF ₃ /O ₂ mixtures

Journal Article Huang, Shuo ; Volynets, Vladimir ; Hamilton, James R. ; ... - Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

Not provided.
https://doi.org/10.1116/1.5019673
Insights to scaling remote plasma sources sustained in NF ₃ mixtures

Journal Article Huang, Shuo ; Volynets, Vladimir ; Hamilton, James R. ; ... - Journal of Vacuum Science and Technology A
Cited by 18
https://doi.org/10.1116/1.4978551
Highly selective Si ₃ N ₄ /SiO ₂ etching using an NF ₃ /N ₂ /O ₂ /H ₂ remote plasma. I. Plasma source and critical fluxes

Journal Article Volynets, Vladimir ; Barsukov, Yuri ; Kim, Gonjun ; ... - Journal of Vacuum Science and Technology A

Highly selective plasma etching of silicon nitride (Si₃N₄), while not etching silicon dioxide (SiO₂), is a critical step in the fabrication of microelectronics devices. In many applications, this etching must be damage-free and isotropic, which then motivates the use of remote plasmas where the reactants interacting with the substrate are dominantly neutral species. In this paper and Paper II, mechanisms for highly selective Si₃N₄ etching in remote plasmas are discussed based on results from experiments and simulations. It has been shown experimentally that high Si₃N₄/SiO₂ etch selectivity (≈380) can be achieved in the downstream effluent of an NF₃/N₂/O₂/H₂ plasma. Themore »« less
https://doi.org/10.1116/1.5125568

Full Text Available
Highly selective Si ₃ N ₄ /SiO ₂ etching using an NF ₃ /N ₂ /O ₂ /H ₂ remote plasma. II. Surface reaction mechanism

Journal Article Jung, Ji-Eun ; Barsukov, Yuri ; Volynets, Vladimir ; ... - Journal of Vacuum Science and Technology A

Developing processes for highly selective etching of silicon nitride (Si₃ N₄) with respect to silicon dioxide (SiO₂) is a major priority for semiconductor fabrication processing. In this paper and in Paper I [Volynets et al., J. Vac. Sci. Technol. A 38, 023007 (2020)], mechanisms are discussed for highly selective Si3N4 etching in a remote plasma based on experimental and theoretical investigations. The Si₃N₄/SiO₂ etch selectivity of up to 380 was experimentally produced using a remote plasma sustained in NF₃/N₂/O₂/H₂ mixtures. A selectivity strongly depends on the flow rate of H₂, an effect attributed to the formation of HF molecules inmore »« less
https://doi.org/10.1116/1.5125569

Full Text Available
Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

Journal Article Tasaka, Akimasa ; Kotaka, Yuki ; Oda, Atsushi ; ... - Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the numbermore »« less
https://doi.org/10.1116/1.4893421

Similar Records

Title: Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures

Citation Formats

Insights to scaling remote plasma sources sustained in NF 3 mixtures journal, May 2017

Inductively Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Robust, Reliable, and Fine Conductor Etching journal, September 2009

Modeling Chemical Downstream Etch Systems for NF 3 / O 2 Mixtures journal, January 1997

Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing journal, November 2015

Control of electron energy distributions and plasma characteristics of dual frequency, pulsed capacitively coupled plasmas sustained in Ar and Ar/CF 4 /O 2 journal, October 2012

Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF3 into N2 Downflow Plasma journal, February 2012

Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition journal, October 2012

Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment journal, April 2017

Hybrid modelling of low temperature plasmas for fundamental investigations and equipment design journal, September 2009

Thin layer etching of silicon nitride: A comprehensive study of selective removal using NH 3 /NF 3 remote plasma journal, November 2016

Chemical dry etching of silicon nitride and silicon dioxide using CF 4 /O 2 /N 2 gas mixtures journal, September 1996

Electronic structure of the radicals NF and NCI. I. Potential energy curves for NF journal, October 1985

Remote H2/N2 plasma processes for simultaneous preparation of low-k interlayer dielectric and interconnect copper surfaces journal, May 2012

Silicon etching in NF3/O2 remote microwave plasmas journal, September 1999

Simulation of Chemical Downstream Etch Systems: Correlation of the Effects of Operating Conditions on Wafer Etch Rate and Uniformity journal, April 1997

Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas journal, January 2001

Free Electron Attachment and Rydberg Electron Transfer to NF3Molecules and Clusters journal, December 1997

Damage‐free selective etching of Si native oxides using NH 3 /NF 3 and SF 6 /H 2 O down‐flow etching journal, July 1993

Role of nitrogen in the downstream etching of silicon nitride journal, July 1996

Remote Plasma Oxidation and Atomic Layer Etching of MoS 2 journal, July 2016

Quantum Chemical Investigation for Chemical Dry Etching of SiO2 by Flowing NF3 into H2 Downflow Plasma journal, December 2011

Investigations of surface reactions during C2F6 plasma etching of SiO2 with equipment and feature scale models journal, March 2001

Electron–molecule collision calculations using the R-matrix method journal, June 2010

Role of NO in highly selective SiN/SiO 2 and SiN/Si etching with NF 3 /O 2 remote plasma: Experiment and simulation journal, November 2017

Calculated cross sections for electron collisions with NF3, NF2and NF with applications to remote plasma sources journal, May 2017

Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures journal, July 1998

Native Oxide Removal on Si Surfaces by N F 3 -Added Hydrogen and Water Vapor Plasma Downstream Treatment journal, April 1994

Plasma etching: Yesterday, today, and tomorrow journal, September 2013

Title: Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF ₃ /O ₂ mixtures

Insights to scaling remote plasma sources sustained in NF 3 mixtures
journal, May 2017

Inductively Coupled Pulsed Plasmas in the Presence of Synchronous Pulsed Substrate Bias for Robust, Reliable, and Fine Conductor Etching
journal, September 2009

Modeling Chemical Downstream Etch Systems for NF 3 / O 2 Mixtures
journal, January 1997

Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
journal, November 2015

Control of electron energy distributions and plasma characteristics of dual frequency, pulsed capacitively coupled plasmas sustained in Ar and Ar/CF ₄ /O ₂
journal, October 2012

Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF₃ into N₂ Downflow Plasma
journal, February 2012

Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition
journal, October 2012

Enhanced dielectric deposition on single-layer MoS₂ with low damage using remote N₂ plasma treatment
journal, April 2017

Hybrid modelling of low temperature plasmas for fundamental investigations and equipment design
journal, September 2009

Thin layer etching of silicon nitride: A comprehensive study of selective removal using NH ₃ /NF ₃ remote plasma
journal, November 2016

Chemical dry etching of silicon nitride and silicon dioxide using CF ₄ /O ₂ /N ₂ gas mixtures
journal, September 1996

Electronic structure of the radicals NF and NCI. I. Potential energy curves for NF
journal, October 1985

Remote H₂/N₂ plasma processes for simultaneous preparation of low-k interlayer dielectric and interconnect copper surfaces
journal, May 2012

Silicon etching in NF3/O2 remote microwave plasmas
journal, September 1999

Simulation of Chemical Downstream Etch Systems: Correlation of the Effects of Operating Conditions on Wafer Etch Rate and Uniformity
journal, April 1997

Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas
journal, January 2001

Free Electron Attachment and Rydberg Electron Transfer to NF₃Molecules and Clusters
journal, December 1997

Damage‐free selective etching of Si native oxides using NH ₃ /NF ₃ and SF ₆ /H ₂ O down‐flow etching
journal, July 1993

Role of nitrogen in the downstream etching of silicon nitride
journal, July 1996

Remote Plasma Oxidation and Atomic Layer Etching of MoS ₂
journal, July 2016

Quantum Chemical Investigation for Chemical Dry Etching of SiO₂ by Flowing NF₃ into H₂ Downflow Plasma
journal, December 2011

Investigations of surface reactions during C2F6 plasma etching of SiO2 with equipment and feature scale models
journal, March 2001

Electron–molecule collision calculations using the R-matrix method
journal, June 2010

Role of NO in highly selective SiN/SiO ₂ and SiN/Si etching with NF ₃ /O ₂ remote plasma: Experiment and simulation
journal, November 2017

Calculated cross sections for electron collisions with NF₃, NF₂and NF with applications to remote plasma sources
journal, May 2017

Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures
journal, July 1998

Native Oxide Removal on Si Surfaces by N F ₃ -Added Hydrogen and Water Vapor Plasma Downstream Treatment
journal, April 1994

Plasma etching: Yesterday, today, and tomorrow
journal, September 2013