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Title: Homo-endotaxial one-dimensional Si nanostructures

Abstract

One-dimensional (1D) nanostructures are highly sought after, both for their novel electronic properties as well as for their improved functionality. However, due to their nanoscale dimensions, these properties are significantly affected by the environment in which they are embedded. Here in this paper, we report on the creation of 1D homo-endotaxial Si nanostructures, i.e. 1D Si nanostructures with a lattice structure that is uniquely different from the Si diamond lattice in which they are embedded. We use scanning tunneling microscopy and spectroscopy, scanning transmission electron microscopy, density functional theory, and conductive atomic force microscopy to elucidate their formation and properties. Depending on kinetic constraints during growth, they can be prepared as endotaxial 1D Si nanostructures completely embedded in crystalline Si, or underneath a stripe of amorphous Si containing a large concentration of Bi atoms. Lastly, these homo-endotaxial 1D Si nanostructures have the potential to be useful components in nanoelectronic devices based on the technologically mature Si platform.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2]; ORCiD logo [1]; ORCiD logo [1];  [2]; ORCiD logo [1]; ORCiD logo [3]
+ Show Author Affiliations
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1422547
Alternate Identifier(s):
OSTI ID: 1597861
Grant/Contract Number:  
AC05-00OR22725; FG02-09ER46554
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Song, Jiaming, Hudak, Bethany M., Sims, Hunter, Sharma, Yogesh, Ward, Thomas Zac, Pantelides, Sokrates T., Lupini, Andrew R., and Snijders, Paul C. Homo-endotaxial one-dimensional Si nanostructures. United States: N. p., 2017. Web. doi:10.1039/c7nr06968e.
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Song, Jiaming, Hudak, Bethany M., Sims, Hunter, Sharma, Yogesh, Ward, Thomas Zac, Pantelides, Sokrates T., Lupini, Andrew R., & Snijders, Paul C. Homo-endotaxial one-dimensional Si nanostructures. United States. doi:10.1039/c7nr06968e.
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Song, Jiaming, Hudak, Bethany M., Sims, Hunter, Sharma, Yogesh, Ward, Thomas Zac, Pantelides, Sokrates T., Lupini, Andrew R., and Snijders, Paul C. Wed . "Homo-endotaxial one-dimensional Si nanostructures". United States. doi:10.1039/c7nr06968e. https://www.osti.gov/servlets/purl/1422547.
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@article{osti_1422547,
title = {Homo-endotaxial one-dimensional Si nanostructures},
author = {Song, Jiaming and Hudak, Bethany M. and Sims, Hunter and Sharma, Yogesh and Ward, Thomas Zac and Pantelides, Sokrates T. and Lupini, Andrew R. and Snijders, Paul C.},
abstractNote = {One-dimensional (1D) nanostructures are highly sought after, both for their novel electronic properties as well as for their improved functionality. However, due to their nanoscale dimensions, these properties are significantly affected by the environment in which they are embedded. Here in this paper, we report on the creation of 1D homo-endotaxial Si nanostructures, i.e. 1D Si nanostructures with a lattice structure that is uniquely different from the Si diamond lattice in which they are embedded. We use scanning tunneling microscopy and spectroscopy, scanning transmission electron microscopy, density functional theory, and conductive atomic force microscopy to elucidate their formation and properties. Depending on kinetic constraints during growth, they can be prepared as endotaxial 1D Si nanostructures completely embedded in crystalline Si, or underneath a stripe of amorphous Si containing a large concentration of Bi atoms. Lastly, these homo-endotaxial 1D Si nanostructures have the potential to be useful components in nanoelectronic devices based on the technologically mature Si platform.},
doi = {10.1039/c7nr06968e},
journal = {Nanoscale},
number = 1,
volume = 10,
place = {United States},
year = {2017},
month = {11}
}
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DOI:  10.1039/c7nr06968e
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