Homo-endotaxial one-dimensional Si nanostructures

Song, Jiaming; Hudak, Bethany M.; Sims, Hunter; Sharma, Yogesh; Ward, Thomas Zac; Pantelides, Sokrates T.; Lupini, Andrew R.; Snijders, Paul C.

doi:10.1039/c7nr06968e

Title: Homo-endotaxial one-dimensional Si nanostructures

Journal Article · 28 November 2017 · Nanoscale

DOI: https://doi.org/10.1039/c7nr06968e · OSTI ID:1422547

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Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

One-dimensional (1D) nanostructures are highly sought after, both for their novel electronic properties as well as for their improved functionality. However, due to their nanoscale dimensions, these properties are significantly affected by the environment in which they are embedded. Here in this paper, we report on the creation of 1D homo-endotaxial Si nanostructures, i.e. 1D Si nanostructures with a lattice structure that is uniquely different from the Si diamond lattice in which they are embedded. We use scanning tunneling microscopy and spectroscopy, scanning transmission electron microscopy, density functional theory, and conductive atomic force microscopy to elucidate their formation and properties. Depending on kinetic constraints during growth, they can be prepared as endotaxial 1D Si nanostructures completely embedded in crystalline Si, or underneath a stripe of amorphous Si containing a large concentration of Bi atoms. Lastly, these homo-endotaxial 1D Si nanostructures have the potential to be useful components in nanoelectronic devices based on the technologically mature Si platform.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; FG02-09ER46554

OSTI ID:: 1422547

Alternate ID(s):: OSTI ID: 1770675; OSTI ID: 1597861

Journal Information:: Nanoscale, Journal Name: Nanoscale Journal Issue: 1 Vol. 10; ISSN NANOHL; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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