Homo-endotaxial one-dimensional Si nanostructures

doi:10.1039/c7nr06968e

Title: Homo-endotaxial one-dimensional Si nanostructures

One-dimensional (1D) nanostructures are highly sought after, both for their novel electronic properties as well as for their improved functionality. However, due to their nanoscale dimensions, these properties are significantly affected by the environment in which they are embedded. Here in this paper, we report on the creation of 1D homo-endotaxial Si nanostructures, i.e. 1D Si nanostructures with a lattice structure that is uniquely different from the Si diamond lattice in which they are embedded. We use scanning tunneling microscopy and spectroscopy, scanning transmission electron microscopy, density functional theory, and conductive atomic force microscopy to elucidate their formation and properties. Depending on kinetic constraints during growth, they can be prepared as endotaxial 1D Si nanostructures completely embedded in crystalline Si, or underneath a stripe of amorphous Si containing a large concentration of Bi atoms. Lastly, these homo-endotaxial 1D Si nanostructures have the potential to be useful components in nanoelectronic devices based on the technologically mature Si platform.

Authors:

; ; Sims, Hunter ^[2] ; ; ; Pantelides, Sokrates T. ^[2] ; ;

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

Publication Date:: 2017-11-29

Grant/Contract Number:: AC05-00OR22725; FG02-09ER46554

Type:: Accepted Manuscript

Journal Name:: Nanoscale

Additional Journal Information:: Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2040-3364

Publisher:: Royal Society of Chemistry

Research Org:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

OSTI Identifier:: 1422547


                    Song, Jiaming, Hudak, Bethany M., Sims, Hunter, Sharma, Yogesh, Ward, Thomas Zac, Pantelides, Sokrates T., Lupini, Andrew R., and Snijders, Paul C.. Homo-endotaxial one-dimensional Si nanostructures.  United States: N. p.,  
        Web.  doi:10.1039/c7nr06968e.

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                    Song, Jiaming, Hudak, Bethany M., Sims, Hunter, Sharma, Yogesh, Ward, Thomas Zac, Pantelides, Sokrates T., Lupini, Andrew R., & Snijders, Paul C.. Homo-endotaxial one-dimensional Si nanostructures.  United States.  doi:10.1039/c7nr06968e.

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                    Song, Jiaming, Hudak, Bethany M., Sims, Hunter, Sharma, Yogesh, Ward, Thomas Zac, Pantelides, Sokrates T., Lupini, Andrew R., and Snijders, Paul C.. 2017.  
        "Homo-endotaxial one-dimensional Si nanostructures".  United States.  
        doi:10.1039/c7nr06968e.  https://www.osti.gov/servlets/purl/1422547.

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@article{osti_1422547,

  title        = {Homo-endotaxial one-dimensional Si nanostructures},

  author       = {Song, Jiaming and Hudak, Bethany M. and Sims, Hunter and Sharma, Yogesh and Ward, Thomas Zac and Pantelides, Sokrates T. and Lupini, Andrew R. and Snijders, Paul C.},

  abstractNote = {One-dimensional (1D) nanostructures are highly sought after, both for their novel electronic properties as well as for their improved functionality. However, due to their nanoscale dimensions, these properties are significantly affected by the environment in which they are embedded. Here in this paper, we report on the creation of 1D homo-endotaxial Si nanostructures, i.e. 1D Si nanostructures with a lattice structure that is uniquely different from the Si diamond lattice in which they are embedded. We use scanning tunneling microscopy and spectroscopy, scanning transmission electron microscopy, density functional theory, and conductive atomic force microscopy to elucidate their formation and properties. Depending on kinetic constraints during growth, they can be prepared as endotaxial 1D Si nanostructures completely embedded in crystalline Si, or underneath a stripe of amorphous Si containing a large concentration of Bi atoms. Lastly, these homo-endotaxial 1D Si nanostructures have the potential to be useful components in nanoelectronic devices based on the technologically mature Si platform.},

  doi          = {10.1039/c7nr06968e},

  journal      = {Nanoscale},

  number       = 1,

  volume       = 10,

  place        = {United States},

  year         = {2017},

  month        = {11}

}

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Free Publicly Accessible Full Text
Accepted Manuscript (DOE)
Publisher's Version of Record
10.1039/c7nr06968e
https://doi.org/10.1039/c7nr06968e

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Title: Homo-endotaxial one-dimensional Si nanostructures

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