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Title: Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS 2

Abstract

Advances in nanoscale material characterization on two-dimensional van der Waals layered materials primarily involve their optical and electronic properties. The thermal properties of these materials are harder to access due to the difficulty of thermal measurements at the nanoscale. In this work, we create a nanoscale magnetothermal device platform to access the basic out-of-plane magnetothermal transport properties of ultrathin van der Waals materials. Specifically, the Nernst effect in the charge density wave transition metal dichalcogenide 1T-TaS 2 is examined on nano-thin flakes in a patterned device structure. It is revealed that near the commensurate charge density wave (CCDW) to nearly commensurate charge density wave (NCCDW) phase transition, the polarity of the Nernst effect changes. Since the Nernst effect is especially sensitive to changes in the Fermi surface, this suggests that large changes are occurring in the out-of-plane electronic structure of 1T-TaS 2, which are otherwise unresolved in just in-plane electronic transport measurements. This may signal a coherent evolution of out-of-plane stacking in the CCDW! NCCDW transition.

Authors:
 [1];  [2];  [3]
  1. Univ. of Rochester, NY (United States); Argonne National Laboratory (ANL), Argonne, IL (United States). Materials Science Division
  2. Univ. of Rochester, NY (United States); Argonne National Laboratory (ANL), Argonne, IL (United States). Nanoscience and Technology Division; Univ. of Ottawa, Ottawa, ON (Canada). Dept. of Physics
  3. Argonne National Laboratory (ANL), Argonne, IL (United States). Materials Science Division and Nanoscience and Technology Division
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1422389
Alternate Identifier(s):
OSTI ID: 1410711
Grant/Contract Number:  
[AC02-06CH11357]
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
[ Journal Volume: 111; Journal Issue: 22]; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wu, Stephen M., Luican-Mayer, Adina, and Bhattacharya, Anand. Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS2. United States: N. p., 2017. Web. doi:10.1063/1.5004804.
Wu, Stephen M., Luican-Mayer, Adina, & Bhattacharya, Anand. Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS2. United States. doi:10.1063/1.5004804.
Wu, Stephen M., Luican-Mayer, Adina, and Bhattacharya, Anand. Mon . "Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS2". United States. doi:10.1063/1.5004804. https://www.osti.gov/servlets/purl/1422389.
@article{osti_1422389,
title = {Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS2},
author = {Wu, Stephen M. and Luican-Mayer, Adina and Bhattacharya, Anand},
abstractNote = {Advances in nanoscale material characterization on two-dimensional van der Waals layered materials primarily involve their optical and electronic properties. The thermal properties of these materials are harder to access due to the difficulty of thermal measurements at the nanoscale. In this work, we create a nanoscale magnetothermal device platform to access the basic out-of-plane magnetothermal transport properties of ultrathin van der Waals materials. Specifically, the Nernst effect in the charge density wave transition metal dichalcogenide 1T-TaS2 is examined on nano-thin flakes in a patterned device structure. It is revealed that near the commensurate charge density wave (CCDW) to nearly commensurate charge density wave (NCCDW) phase transition, the polarity of the Nernst effect changes. Since the Nernst effect is especially sensitive to changes in the Fermi surface, this suggests that large changes are occurring in the out-of-plane electronic structure of 1T-TaS2, which are otherwise unresolved in just in-plane electronic transport measurements. This may signal a coherent evolution of out-of-plane stacking in the CCDW! NCCDW transition.},
doi = {10.1063/1.5004804},
journal = {Applied Physics Letters},
number = [22],
volume = [111],
place = {United States},
year = {2017},
month = {11}
}

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