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Title: Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers

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Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 97 Journal Issue: 7; Journal ID: ISSN 2469-9950
American Physical Society
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United States

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Kou, Liangzhi, Fu, Huixia, Ma, Yandong, Yan, Binghai, Liao, Ting, Du, Aijun, and Chen, Changfeng. Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.075429.
Kou, Liangzhi, Fu, Huixia, Ma, Yandong, Yan, Binghai, Liao, Ting, Du, Aijun, & Chen, Changfeng. Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers. United States. doi:10.1103/PhysRevB.97.075429.
Kou, Liangzhi, Fu, Huixia, Ma, Yandong, Yan, Binghai, Liao, Ting, Du, Aijun, and Chen, Changfeng. Tue . "Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers". United States. doi:10.1103/PhysRevB.97.075429.
title = {Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers},
author = {Kou, Liangzhi and Fu, Huixia and Ma, Yandong and Yan, Binghai and Liao, Ting and Du, Aijun and Chen, Changfeng},
abstractNote = {},
doi = {10.1103/PhysRevB.97.075429},
journal = {Physical Review B},
number = 7,
volume = 97,
place = {United States},
year = {2018},
month = {2}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1103/PhysRevB.97.075429

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