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Title: Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces

Abstract

All-dielectric metasurfaces, two-dimensional arrays of subwavelength low loss dielectric inclusions, can be used not only to control the amplitude and phase of optical beams, but also to generate new wavelengths through enhanced nonlinear optical processes that are free from some of the constraints dictated by the use of bulk materials. Recently, high quality factor (Q) resonances in these metasurfaces have been revealed and utilized for applications such as sensing and lasing. The origin of these resonances stems from the interference of two nanoresonator modes with vastly different Q. Here we show that nonlinear optical processes can be further enhanced by utilizing these high-Q resonances in broken symmetry all-dielectric metasurfaces. As a result, we study second harmonic generation from broken symmetry metasurfaces made from III–V semiconductors and observe nontrivial spectral shaping of second-harmonic and multifold efficiency enhancement induced by high field localization and enhancement inside the nanoresonators.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1]; ORCiD logo [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1421766
Report Number(s):
SAND-2018-1266J
Journal ID: ISSN 2330-4022; 660514
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
ACS Photonics
Additional Journal Information:
Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2330-4022
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; dielectric metasurfaces; Fano resonances; III−V semiconductors; second-harmonic generation

Citation Formats

Vabishchevich, Polina P., Liu, Sheng, Sinclair, Michael B., Keeler, Gordon A., Peake, Gregory M., and Brener, Igal. Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces. United States: N. p., 2018. Web. https://doi.org/10.1021/acsphotonics.7b01478.
Vabishchevich, Polina P., Liu, Sheng, Sinclair, Michael B., Keeler, Gordon A., Peake, Gregory M., & Brener, Igal. Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces. United States. https://doi.org/10.1021/acsphotonics.7b01478
Vabishchevich, Polina P., Liu, Sheng, Sinclair, Michael B., Keeler, Gordon A., Peake, Gregory M., and Brener, Igal. Sat . "Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces". United States. https://doi.org/10.1021/acsphotonics.7b01478. https://www.osti.gov/servlets/purl/1421766.
@article{osti_1421766,
title = {Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces},
author = {Vabishchevich, Polina P. and Liu, Sheng and Sinclair, Michael B. and Keeler, Gordon A. and Peake, Gregory M. and Brener, Igal},
abstractNote = {All-dielectric metasurfaces, two-dimensional arrays of subwavelength low loss dielectric inclusions, can be used not only to control the amplitude and phase of optical beams, but also to generate new wavelengths through enhanced nonlinear optical processes that are free from some of the constraints dictated by the use of bulk materials. Recently, high quality factor (Q) resonances in these metasurfaces have been revealed and utilized for applications such as sensing and lasing. The origin of these resonances stems from the interference of two nanoresonator modes with vastly different Q. Here we show that nonlinear optical processes can be further enhanced by utilizing these high-Q resonances in broken symmetry all-dielectric metasurfaces. As a result, we study second harmonic generation from broken symmetry metasurfaces made from III–V semiconductors and observe nontrivial spectral shaping of second-harmonic and multifold efficiency enhancement induced by high field localization and enhancement inside the nanoresonators.},
doi = {10.1021/acsphotonics.7b01478},
journal = {ACS Photonics},
number = 5,
volume = 5,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
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Citation Metrics:
Cited by: 22 works
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Figures / Tables:

Figure 1 Figure 1: Symmetry broken GaAs metasurface used to create high-Q Fano resonances. (a) Schematic of a Fano-resonant metasurface design, based on a cube with a ∼300 nm side that has a notch cut from the corner. Inset top: a top-view SEM image of the fabricated Fano metasurface. Inset bottom: amore » 20° side-view SEM image of the fabricated Fano metasurface. The scale bar corresponds to 1 μm. (b) Reflectivity spectrum of the Fano metasurface, that exhibits a high-Q resonance with a ∼2 nm spectral width. Inset is a zoomed in region of the reflectivity spectrum around the Fano resonance. (c) Simulated reflectance spectra with electric field intensity profiles, corresponding to the maxima of field enhancement of Fano resonance, the ED and the MD resonances in the horizontal x−y plane located half way through the GaAs nanoresonator. Arrows indicate the directions of electromagnetic field vectors inside the nanoresonator at peak intensities.« less

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