Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication

Musick, Katherine M.; Wendt, Joel R.; Resnick, Paul J.; Sinclair, Michael B.; Burckel, David Bruce

doi:10.1116/1.5009918

Title: Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication

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Abstract

Here, the manufacturing tolerances of a stencil-lithography variant, membrane projection lithography, were investigated. In the first part of this work, electron beam lithography was used to create stencils with a range of linewidths. These patterns were transferred into the stencil membrane and used to pattern metallic lines on vertical silicon faces. Only the largest lines, with a nominal width of 84 nm, were resolved, resulting in 45 ± 10 nm (average ± standard deviation) as deposited with 135-nm spacing. Although written in the e-beam write software file as 84-nm in width, the lines exhibited linewidth bias. This can largely be attributed to nonvertical sidewalls inherent to dry etching techniques that cause proportionally larger impact with decreasing feature size. The line edge roughness can be significantly attributed to the grain structure of the aluminum nitride stencil membrane. In the second part of this work, the spatial uniformity of optically defined (as opposed to e-beam written) metamaterial structures over large areas was assessed. A Fourier transform infrared spectrometer microscope was used to collect the reflection spectra of samples with optically defined vertical split ring from 25 spatially resolved 300 × 300 μm regions in a 1-cm² area. The technique is shown tomore »« less

Authors:

Musick, Katherine M. ^[1]; Wendt, Joel R. ^[1]; Resnick, Paul J. ^[1]; Sinclair, Michael B. ^[1]; Burckel, David Bruce ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: 2018-01-18

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1421649

Alternate Identifier(s):: OSTI ID: 1417408

Report Number(s):: SAND-2017-13771J
Journal ID: ISSN 2166-2746; 659658

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics

Additional Journal Information:: Journal Volume: 36; Journal Issue: 1; Journal ID: ISSN 2166-2746

Publisher:: American Vacuum Society/AIP

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Musick, Katherine M., Wendt, Joel R., Resnick, Paul J., Sinclair, Michael B., and Burckel, David Bruce. Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication.  United States: N. p., 2018. 
Web.  doi:10.1116/1.5009918.

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                    Musick, Katherine M., Wendt, Joel R., Resnick, Paul J., Sinclair, Michael B., & Burckel, David Bruce. Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication.  United States.  https://doi.org/10.1116/1.5009918

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                    Musick, Katherine M., Wendt, Joel R., Resnick, Paul J., Sinclair, Michael B., and Burckel, David Bruce. Thu .  
"Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication".  United States.  https://doi.org/10.1116/1.5009918.  https://www.osti.gov/servlets/purl/1421649.

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@article{osti_1421649,

  title        = {Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication},

  author       = {Musick, Katherine M. and Wendt, Joel R. and Resnick, Paul J. and Sinclair, Michael B. and Burckel, David Bruce},

  abstractNote = {Here, the manufacturing tolerances of a stencil-lithography variant, membrane projection lithography, were investigated. In the first part of this work, electron beam lithography was used to create stencils with a range of linewidths. These patterns were transferred into the stencil membrane and used to pattern metallic lines on vertical silicon faces. Only the largest lines, with a nominal width of 84 nm, were resolved, resulting in 45 ± 10 nm (average ± standard deviation) as deposited with 135-nm spacing. Although written in the e-beam write software file as 84-nm in width, the lines exhibited linewidth bias. This can largely be attributed to nonvertical sidewalls inherent to dry etching techniques that cause proportionally larger impact with decreasing feature size. The line edge roughness can be significantly attributed to the grain structure of the aluminum nitride stencil membrane. In the second part of this work, the spatial uniformity of optically defined (as opposed to e-beam written) metamaterial structures over large areas was assessed. A Fourier transform infrared spectrometer microscope was used to collect the reflection spectra of samples with optically defined vertical split ring from 25 spatially resolved 300 × 300 μm regions in a 1-cm2 area. The technique is shown to provide a qualitative measure of the uniformity of the inclusions.},

  doi          = {10.1116/1.5009918},

  journal      = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},

  number       = 1,

  volume       = 36,

  place        = {United States},

  year         = {2018},

  month        = {1}

}

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