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This content will become publicly available on October 23, 2018

Title: Dual-gate operation and carrier transport in SiGe p–n junction nanowires

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.
 [1] ;  [2] ;  [1] ;  [1] ; ORCiD logo [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Report Number(s):
SAND-2017-12601J; LA-UR-17-26093
Journal ID: ISSN 0957-4484; 658878
Grant/Contract Number:
AC04-94AL85000; AC52-06NA25396
Accepted Manuscript
Journal Name:
Additional Journal Information:
Journal Volume: 28; Journal Issue: 46; Journal ID: ISSN 0957-4484
IOP Publishing
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
77 NANOSCIENCE AND NANOTECHNOLOGY; nanowires; SiGe; p–n junction; field-effect transistor; Schottky contact; Material Science
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1425761