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Title: Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures

Abstract

Here, we have studied spin transport and magnetoresistance in yttrium iron garnet (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite ferromagnetic resonance in YIG with a microwave frequency magnetic field and detect the voltage associated with the inverse spin-Hall effect (ISHE) in the Pt layer. The ISHE signal is found to decay exponentially with the NiO thickness with a characteristic decay length of 3.9 nm. This is contrasted with the magnetoresistance in these same structures. The symmetry of the magnetoresistive response is consistent with spin-Hall magnetoresistance (SMR). However, in contrast to the ISHE response, as the NiO thickness increases the SMR signal goes towards zero abruptly at a NiO thickness of ≃ 4 nm, highlighting the different length scales associated with the spin-transport in NiO and SMR in such trilayers.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [2];  [2];  [3];  [1]
  1. Department of Physics, New York University, New York, New York 10003, USA
  2. Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
  3. Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025, USA
Publication Date:
Research Org.:
New York Univ. (NYU), NY (United States); Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1337435
Alternate Identifier(s):
OSTI ID: 1393525; OSTI ID: 1421315
Grant/Contract Number:  
SC0012670
Resource Type:
Published Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Name: AIP Advances Journal Volume: 7 Journal Issue: 5; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; 36 MATERIALS SCIENCE; Magnetoresistance; Electric measurements; Antiferromagnetism; Sputter deposition; Multilayers

Citation Formats

Hung, Yu-Ming, Hahn, Christian, Chang, Houchen, Wu, Mingzhong, Ohldag, Hendrik, and Kent, Andrew D. Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures. United States: N. p., 2016. Web. doi:10.1063/1.4972998.
Hung, Yu-Ming, Hahn, Christian, Chang, Houchen, Wu, Mingzhong, Ohldag, Hendrik, & Kent, Andrew D. Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures. United States. https://doi.org/10.1063/1.4972998
Hung, Yu-Ming, Hahn, Christian, Chang, Houchen, Wu, Mingzhong, Ohldag, Hendrik, and Kent, Andrew D. Thu . "Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures". United States. https://doi.org/10.1063/1.4972998.
@article{osti_1337435,
title = {Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures},
author = {Hung, Yu-Ming and Hahn, Christian and Chang, Houchen and Wu, Mingzhong and Ohldag, Hendrik and Kent, Andrew D.},
abstractNote = {Here, we have studied spin transport and magnetoresistance in yttrium iron garnet (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite ferromagnetic resonance in YIG with a microwave frequency magnetic field and detect the voltage associated with the inverse spin-Hall effect (ISHE) in the Pt layer. The ISHE signal is found to decay exponentially with the NiO thickness with a characteristic decay length of 3.9 nm. This is contrasted with the magnetoresistance in these same structures. The symmetry of the magnetoresistive response is consistent with spin-Hall magnetoresistance (SMR). However, in contrast to the ISHE response, as the NiO thickness increases the SMR signal goes towards zero abruptly at a NiO thickness of ≃ 4 nm, highlighting the different length scales associated with the spin-transport in NiO and SMR in such trilayers.},
doi = {10.1063/1.4972998},
journal = {AIP Advances},
number = 5,
volume = 7,
place = {United States},
year = {Thu Dec 22 00:00:00 EST 2016},
month = {Thu Dec 22 00:00:00 EST 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4972998

Citation Metrics:
Cited by: 24 works
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Works referencing / citing this record:

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers
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Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers
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Giant magneto-spin-Seebeck effect and magnon transfer torques in insulating spin valves
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Identifying valency and occupation sites of Ir dopants in antiferromagnetic α-Fe 2 O 3 thin films with X-ray absorption fine structure and Mössbauer spectroscopy
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Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe 2 O 3 /NiO/Pt epitaxial stacks
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Large Spin Hall Magnetoresistance in Antiferromagnetic α Fe 2 O 3 / Pt Heterostructures
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