Origin of stretched-exponential photoluminescence relaxation in size-separated silicon nanocrystals
Abstract
A detailed understanding of the photoluminescence (PL) from silicon nanocrystals (SiNCs) is convoluted by the complexity of the decay mechanism, including a stretched-exponential relaxation and the presence of both nanosecond and microsecond time scales. In this publication, we analyze the microsecond PL decay of size-resolved SiNC fractions in both full-spectrum (FS) and spectrally resolved (SR) configurations, where the stretching exponent and lifetime are used to deduce a probability distribution function (PDF) of decay rates. For the PL decay measured at peak emission, we find a systematic shift and narrowing of the PDF in comparison to the FS measurements. In a similar fashion, we resolve the PL lifetime of the ‘blue’, ‘peak’, and ‘red’ regions of the spectrum and map PL decays of different photon energy onto their corresponding location in the PDF. Furthermore, a general trend is observed where higher and lower photon energies are correlated with shorter and longer lifetimes, respectively, which we relate to the PL line width and electron-phonon coupling.
- Authors:
-
- Department of Physics, North Dakota State University, Fargo, North Dakota 58108, USA
- Department of Chemistry and Biochemistry, North Dakota State University, Fargo, North Dakota 58108, USA
- Publication Date:
- Research Org.:
- North Dakota State Univ., Fargo, ND (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1361919
- Alternate Identifier(s):
- OSTI ID: 1393532; OSTI ID: 1421280
- Grant/Contract Number:
- FG36-08GO88160
- Resource Type:
- Published Article
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Name: AIP Advances Journal Volume: 7 Journal Issue: 5; Journal ID: ISSN 2158-3226
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Photoluminescence; Nanocrystals; Solvents; Silicon; Surface oxidation
Citation Formats
Brown, Samuel L., Krishnan, Retheesh, Elbaradei, Ahmed, Sivaguru, Jayaraman, Sibi, Mukund P., and Hobbie, Erik K. Origin of stretched-exponential photoluminescence relaxation in size-separated silicon nanocrystals. United States: N. p., 2017.
Web. doi:10.1063/1.4984608.
Brown, Samuel L., Krishnan, Retheesh, Elbaradei, Ahmed, Sivaguru, Jayaraman, Sibi, Mukund P., & Hobbie, Erik K. Origin of stretched-exponential photoluminescence relaxation in size-separated silicon nanocrystals. United States. https://doi.org/10.1063/1.4984608
Brown, Samuel L., Krishnan, Retheesh, Elbaradei, Ahmed, Sivaguru, Jayaraman, Sibi, Mukund P., and Hobbie, Erik K. Thu .
"Origin of stretched-exponential photoluminescence relaxation in size-separated silicon nanocrystals". United States. https://doi.org/10.1063/1.4984608.
@article{osti_1361919,
title = {Origin of stretched-exponential photoluminescence relaxation in size-separated silicon nanocrystals},
author = {Brown, Samuel L. and Krishnan, Retheesh and Elbaradei, Ahmed and Sivaguru, Jayaraman and Sibi, Mukund P. and Hobbie, Erik K.},
abstractNote = {A detailed understanding of the photoluminescence (PL) from silicon nanocrystals (SiNCs) is convoluted by the complexity of the decay mechanism, including a stretched-exponential relaxation and the presence of both nanosecond and microsecond time scales. In this publication, we analyze the microsecond PL decay of size-resolved SiNC fractions in both full-spectrum (FS) and spectrally resolved (SR) configurations, where the stretching exponent and lifetime are used to deduce a probability distribution function (PDF) of decay rates. For the PL decay measured at peak emission, we find a systematic shift and narrowing of the PDF in comparison to the FS measurements. In a similar fashion, we resolve the PL lifetime of the ‘blue’, ‘peak’, and ‘red’ regions of the spectrum and map PL decays of different photon energy onto their corresponding location in the PDF. Furthermore, a general trend is observed where higher and lower photon energies are correlated with shorter and longer lifetimes, respectively, which we relate to the PL line width and electron-phonon coupling.},
doi = {10.1063/1.4984608},
journal = {AIP Advances},
number = 5,
volume = 7,
place = {United States},
year = {Thu May 25 00:00:00 EDT 2017},
month = {Thu May 25 00:00:00 EDT 2017}
}
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