Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

Journal Article · 24 May 2016 · Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

DOI: https://doi.org/10.1116/1.4949260 · OSTI ID:1421240

Kawakami, Masatoshi ^[1]; Metzler, Dominik ^[2]; Li, Chen ^[3]; Oehrlein, Gottlieb S. ^[2]

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1. Electronic Device Systems Business Group, Hitachi High-Technologies Corporation, 794 Higashitoyoi, Kudamatsu, Yamaguchi 744-0002, Japan
2. Department of Material Science and Engineering, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742
3. Department of Physics, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742

• Sponsoring Organization: USDOE
• Grant/Contract Number: SC0001939
• OSTI ID: 1421240
• Journal Information: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 34 Journal Issue: 4; ISSN 0734-2101
• Publisher: American Vacuum SocietyCopyright Statement
• Country of Publication: United States
• Language: English