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Title: Silicon-nitride photonic circuits interfaced with monolayer MoS 2

Authors:
 [1] ;  [2] ;  [3] ;  [3] ; ORCiD logo [4]
  1. Applied Physics Program, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
  2. Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
  3. Center for Nanoscale Materials, Argonne National Laboratory, 9700 S Cass Avenue, Argonne, Illinois 60439, USA
  4. Applied Physics Program, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA, Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 107 Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1421192

Wei, Guohua, Stanev, Teodor K., Czaplewski, David A., Jung, Il Woong, and Stern, Nathaniel P.. Silicon-nitride photonic circuits interfaced with monolayer MoS 2. United States: N. p., Web. doi:10.1063/1.4929779.
Wei, Guohua, Stanev, Teodor K., Czaplewski, David A., Jung, Il Woong, & Stern, Nathaniel P.. Silicon-nitride photonic circuits interfaced with monolayer MoS 2. United States. doi:10.1063/1.4929779.
Wei, Guohua, Stanev, Teodor K., Czaplewski, David A., Jung, Il Woong, and Stern, Nathaniel P.. 2015. "Silicon-nitride photonic circuits interfaced with monolayer MoS 2". United States. doi:10.1063/1.4929779.
@article{osti_1421192,
title = {Silicon-nitride photonic circuits interfaced with monolayer MoS 2},
author = {Wei, Guohua and Stanev, Teodor K. and Czaplewski, David A. and Jung, Il Woong and Stern, Nathaniel P.},
abstractNote = {},
doi = {10.1063/1.4929779},
journal = {Applied Physics Letters},
number = 9,
volume = 107,
place = {United States},
year = {2015},
month = {8}
}

Works referenced in this record:

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  • DOI: 10.1038/nnano.2012.193

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Single-layer MoS2 transistors
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  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
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