Valley splitting of single-electron Si MOS quantum dots
Abstract
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same.
- Authors:
-
[1];
[1]
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Univ. de Sherbrooke, Sherbrooke, QC (Canada); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- The Univ. of New South Wales, Sydney (Australia)
- Univ. of Cambridge, Cambridge (United Kingdom)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1346544
- Alternate Identifier(s):
- OSTI ID: 1421186
- Report Number(s):
- SAND-2016-10270J
Journal ID: ISSN 0003-6951; APPLAB; 648248; TRN: US1701126
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 25; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Citation Formats
Gamble, John King, Harvey-Collard, Patrick, Jacobson, N. Tobias, Baczewski, Andrew D., Nielsen, Erik, Maurer, Leon, Montano, Ines, Rudolph, Martin, Carroll, M. S., Yang, C. H., Rossi, A., Dzurak, A. S., and Muller, Richard P. Valley splitting of single-electron Si MOS quantum dots. United States: N. p., 2016.
Web. doi:10.1063/1.4972514.
Gamble, John King, Harvey-Collard, Patrick, Jacobson, N. Tobias, Baczewski, Andrew D., Nielsen, Erik, Maurer, Leon, Montano, Ines, Rudolph, Martin, Carroll, M. S., Yang, C. H., Rossi, A., Dzurak, A. S., & Muller, Richard P. Valley splitting of single-electron Si MOS quantum dots. United States. https://doi.org/10.1063/1.4972514
Gamble, John King, Harvey-Collard, Patrick, Jacobson, N. Tobias, Baczewski, Andrew D., Nielsen, Erik, Maurer, Leon, Montano, Ines, Rudolph, Martin, Carroll, M. S., Yang, C. H., Rossi, A., Dzurak, A. S., and Muller, Richard P. Mon .
"Valley splitting of single-electron Si MOS quantum dots". United States. https://doi.org/10.1063/1.4972514. https://www.osti.gov/servlets/purl/1346544.
@article{osti_1346544,
title = {Valley splitting of single-electron Si MOS quantum dots},
author = {Gamble, John King and Harvey-Collard, Patrick and Jacobson, N. Tobias and Baczewski, Andrew D. and Nielsen, Erik and Maurer, Leon and Montano, Ines and Rudolph, Martin and Carroll, M. S. and Yang, C. H. and Rossi, A. and Dzurak, A. S. and Muller, Richard P.},
abstractNote = {Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same.},
doi = {10.1063/1.4972514},
journal = {Applied Physics Letters},
number = 25,
volume = 109,
place = {United States},
year = {Mon Dec 19 00:00:00 EST 2016},
month = {Mon Dec 19 00:00:00 EST 2016}
}
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Works referenced in this record:
A single-atom electron spin qubit in silicon
journal, September 2012
- Pla, Jarryd J.; Tan, Kuan Y.; Dehollain, Juan P.
- Nature, Vol. 489, Issue 7417
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
journal, July 2014
- Kim, Dohun; Shi, Zhan; Simmons, C. B.
- Nature, Vol. 511, Issue 7507
Multivalley effective mass theory simulation of donors in silicon
journal, June 2015
- Gamble, John King; Jacobson, N. Tobias; Nielsen, Erik
- Physical Review B, Vol. 91, Issue 23
Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder
journal, February 2007
- Kharche, Neerav; Prada, Marta; Boykin, Timothy B.
- Applied Physics Letters, Vol. 90, Issue 9
Quantum dot self-consistent electronic structure and the Coulomb blockade
journal, November 1996
- Stopa, M.
- Physical Review B, Vol. 54, Issue 19
Surface roughness at the Si(100)- interface
journal, December 1985
- Goodnick, S. M.; Ferry, D. K.; Wilmsen, C. W.
- Physical Review B, Vol. 32, Issue 12
Quantum computation with quantum dots
journal, January 1998
- Loss, Daniel; DiVincenzo, David P.
- Physical Review A, Vol. 57, Issue 1
Genetic design of enhanced valley splitting towards a spin qubit in silicon
journal, September 2013
- Zhang, Lijun; Luo, Jun-Wei; Saraiva, Andre
- Nature Communications, Vol. 4, Issue 1
Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells
journal, March 2012
- Jiang, Zhengping; Kharche, Neerav; Boykin, Timothy
- Applied Physics Letters, Vol. 100, Issue 10
Valley splitting theory of quantum wells
journal, March 2007
- Friesen, Mark; Chutia, Sucismita; Tahan, Charles
- Physical Review B, Vol. 75, Issue 11
Coherent control of macroscopic quantum states in a single-Cooper-pair box
journal, April 1999
- Nakamura, Y.; Pashkin, Yu. A.; Tsai, J. S.
- Nature, Vol. 398, Issue 6730
Spins in few-electron quantum dots
journal, October 2007
- Hanson, R.; Kouwenhoven, L. P.; Petta, J. R.
- Reviews of Modern Physics, Vol. 79, Issue 4
Interface roughness, valley-orbit coupling, and valley manipulation in quantum dots
journal, November 2010
- Culcer, Dimitrie; Hu, Xuedong; Das Sarma, S.
- Physical Review B, Vol. 82, Issue 20
Fast Hybrid Silicon Double-Quantum-Dot Qubit
journal, April 2012
- Shi, Zhan; Simmons, C. B.; Prance, J. R.
- Physical Review Letters, Vol. 108, Issue 14
Valley-Based Noise-Resistant Quantum Computation Using Si Quantum Dots
journal, March 2012
- Culcer, Dimitrie; Saraiva, A. L.; Koiller, Belita
- Physical Review Letters, Vol. 108, Issue 12
Coherent singlet-triplet oscillations in a silicon-based double quantum dot
journal, January 2012
- Maune, B. M.; Borselli, M. G.; Huang, B.
- Nature, Vol. 481, Issue 7381
Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
journal, September 2005
- Petta, J. R.
- Science, Vol. 309, Issue 5744
Disorder-induced valley-orbit hybrid states in Si quantum dots
journal, July 2013
- Gamble, John King; Eriksson, M. A.; Coppersmith, S. N.
- Physical Review B, Vol. 88, Issue 3
Universal quantum computation with the exchange interaction
journal, November 2000
- DiVincenzo, D. P.; Bacon, D.; Kempe, J.
- Nature, Vol. 408, Issue 6810
Engineered valley-orbit splittings in quantum-confined nanostructures in silicon
journal, May 2011
- Rahman, R.; Verduijn, J.; Kharche, N.
- Physical Review B, Vol. 83, Issue 19
Controllable valley splitting in silicon quantum devices
journal, December 2006
- Goswami, Srijit; Slinker, K. A.; Friesen, Mark
- Nature Physics, Vol. 3, Issue 1
Quantum computing on long-lived donor states of Li in Si
journal, August 2005
- Smelyanskiy, V. N.; Petukhov, A. G.; Osipov, V. V.
- Physical Review B, Vol. 72, Issue 8
A two-qubit logic gate in silicon
journal, October 2015
- Veldhorst, M.; Yang, C. H.; Hwang, J. C. C.
- Nature, Vol. 526, Issue 7573, p. 410-414
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
journal, June 2013
- Yang, C. H.; Rossi, A.; Ruskov, R.
- Nature Communications, Vol. 4, Issue 1
Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot
journal, December 2011
- Shi, Zhan; Simmons, C. B.; Prance, J. R.
- Applied Physics Letters, Vol. 99, Issue 23
Silicon quantum electronics
journal, July 2013
- Zwanenburg, Floris A.; Dzurak, Andrew S.; Morello, Andrea
- Reviews of Modern Physics, Vol. 85, Issue 3
Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models
journal, October 2004
- Boykin, Timothy B.; Klimeck, Gerhard; Friesen, Mark
- Physical Review B, Vol. 70, Issue 16
Realizing singlet-triplet qubits in multivalley Si quantum dots
journal, November 2009
- Culcer, Dimitrie; Cywiński, Łukasz; Li, Qiuzi
- Physical Review B, Vol. 80, Issue 20
Interface roughness, valley-orbit coupling and valley manipulation in quantum dots
text, January 2010
- Culcer, Dimitrie; Hu, Xuedong; Sarma, S. Das
- arXiv
Valley-based noise-resistant quantum computation using Si quantum dots
text, January 2011
- Culcer, Dimitrie; Saraiva, A. L.; Koiller, Belita
- arXiv
Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot
text, January 2011
- Shi, Zhan; Simmons, C. B.; Prance, J. R.
- arXiv
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
text, January 2013
- Yang, C. H.; Rossi, A.; Ruskov, R.
- arXiv
A single-atom electron spin qubit in silicon
text, January 2013
- Pla, Jarryd J.; Tan, Kuan Y.; Dehollain, Juan P.
- arXiv
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
text, January 2014
- Kim, Dohun; Shi, Zhan; Simmons, C. B.
- arXiv
Multivalley effective mass theory simulation of donors in silicon
text, January 2014
- Gamble, John King; Jacobson, N. Tobias; Nielsen, Erik
- arXiv
Quantum computing on long-lived donor states of Li in Si
text, January 2004
- Smelyanskiy, V. N.; Petukhov, A. G.; Osipov, V. V.
- arXiv
Works referencing / citing this record:
Coherent coupling between a quantum dot and a donor in silicon
journal, October 2017
- Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin
- Nature Communications, Vol. 8, Issue 1
A silicon metal-oxide-semiconductor electron spin-orbit qubit
journal, May 2018
- Jock, Ryan M.; Jacobson, N. Tobias; Harvey-Collard, Patrick
- Nature Communications, Vol. 9, Issue 1
Large tunable valley splitting in edge-free graphene quantum dots on boron nitride
journal, March 2018
- Freitag, Nils M.; Reisch, Tobias; Chizhova, Larisa A.
- Nature Nanotechnology, Vol. 13, Issue 5
The critical role of substrate disorder in valley splitting in Si quantum wells
journal, June 2018
- Neyens, Samuel F.; Foote, Ryan H.; Thorgrimsson, Brandur
- Applied Physics Letters, Vol. 112, Issue 24
Electric-field tuning of the valley splitting in silicon corner dots
journal, July 2018
- Ibberson, D. J.; Bourdet, L.; Abadillo-Uriel, J. C.
- Applied Physics Letters, Vol. 113, Issue 5
A low-disorder metal-oxide-silicon double quantum dot
journal, January 2019
- Kim, J. -S.; Hazard, T. M.; Houck, A. A.
- Applied Physics Letters, Vol. 114, Issue 4
Theory of valley-resolved spectroscopy of a Si triple quantum dot coupled to a microwave resonator
journal, January 2020
- Russ, Maximilian; Péterfalvi, Csaba G.; Burkard, Guido
- Journal of Physics: Condensed Matter, Vol. 32, Issue 16
Few-electrode design for silicon MOS quantum dots
journal, November 2019
- Ramirez, Eduardo B.; Sfigakis, Francois; Kudva, Sukanya
- Semiconductor Science and Technology, Vol. 35, Issue 1
Network architecture for a topological quantum computer in silicon
journal, January 2019
- Buonacorsi, Brandon; Cai, Zhenyu; Ramirez, Eduardo B.
- Quantum Science and Technology, Vol. 4, Issue 2
Semiconductor quantum computation
journal, December 2018
- Zhang, Xin; Li, Hai-Ou; Cao, Gang
- National Science Review, Vol. 6, Issue 1
Quantum Transport Properties of Industrial Si 28 / Si O 2 28
journal, July 2019
- Sabbagh, D.; Thomas, N.; Torres, J.
- Physical Review Applied, Vol. 12, Issue 1
Spin-Blockade Spectroscopy of Si / Si - Ge Quantum Dots
journal, July 2019
- Jones, A. M.; Pritchett, E. J.; Chen, E. H.
- Physical Review Applied, Vol. 12, Issue 1
Effects of interface steps on the valley-orbit coupling in a Si/SiGe quantum dot
journal, September 2019
- Tariq, Bilal; Hu, Xuedong
- Physical Review B, Vol. 100, Issue 12
Coherent coupling between a quantum dot and a donor in silicon
text, January 2015
- Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin
- arXiv
Large tunable valley splitting in edge-free graphene quantum dots on boron nitride
text, January 2017
- Freitag, Nils M.; Reisch, Tobias; Chizhova, Larisa A.
- arXiv
A low-disorder Metal-Oxide-Silicon double quantum dot
text, January 2018
- Kim, Jin-Sung; Hazard, Thomas M.; Houck, Andrew A.
- arXiv
Few-electrode design for silicon MOS quantum dots
text, January 2018
- Ramirez, Eduardo B.; Sfigakis, Francois; Kudva, Sukanya
- arXiv
Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
text, January 2019
- Tariq, Bilal; Hu, Xuedong
- arXiv
Theory of valley-resolved spectroscopy of a Si triple quantum dot coupled to a microwave resonator
text, January 2019
- Russ, Maximilian; Péterfalvi, Csaba G.; Burkard, Guido
- arXiv
Coherent coupling between a quantum dot and a donor in silicon
journal, October 2017
- Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin
- Nature Communications, Vol. 8, Issue 1
A silicon metal-oxide-semiconductor electron spin-orbit qubit
journal, May 2018
- Jock, Ryan M.; Jacobson, N. Tobias; Harvey-Collard, Patrick
- Nature Communications, Vol. 9, Issue 1