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Title: Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Electrical and Computer Engineering Department, UC Santa Barbara, Santa Barbara, California 93106
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 34; Journal Issue: 3; Related Information: CHORUS Timestamp: 2018-03-06 12:32:32; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1421145