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Title: Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

Authors:
 [1] ;  [2] ;  [3] ;  [3] ; ORCiD logo [2] ;  [2] ;  [4] ;  [4] ; ORCiD logo [4] ;  [2]
  1. The George Washington University, Washington, DC 20037, USA, US Naval Research Laboratory, Washington, DC 20375, USA
  2. US Naval Research Laboratory, Washington, DC 20375, USA
  3. US Naval Research Laboratory, Washington, DC 20375, USA, Sotera Defense Solutions, Annapolis Junction, Maryland 20701, USA
  4. University of Cádiz, 11510, Puerto Real, Cádiz, Spain
Publication Date:
Grant/Contract Number:
AR0000335
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 119 Journal Issue: 19; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1421097

Lumb, M. P., Yakes, M. K., González, M., Bennett, M. F., Schmieder, K. J., Affouda, C. A., Herrera, M., Delgado, F. J., Molina, S. I., and Walters, R. J.. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates. United States: N. p., Web. doi:10.1063/1.4948958.
Lumb, M. P., Yakes, M. K., González, M., Bennett, M. F., Schmieder, K. J., Affouda, C. A., Herrera, M., Delgado, F. J., Molina, S. I., & Walters, R. J.. Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates. United States. doi:10.1063/1.4948958.
Lumb, M. P., Yakes, M. K., González, M., Bennett, M. F., Schmieder, K. J., Affouda, C. A., Herrera, M., Delgado, F. J., Molina, S. I., and Walters, R. J.. 2016. "Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates". United States. doi:10.1063/1.4948958.
@article{osti_1421097,
title = {Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates},
author = {Lumb, M. P. and Yakes, M. K. and González, M. and Bennett, M. F. and Schmieder, K. J. and Affouda, C. A. and Herrera, M. and Delgado, F. J. and Molina, S. I. and Walters, R. J.},
abstractNote = {},
doi = {10.1063/1.4948958},
journal = {Journal of Applied Physics},
number = 19,
volume = 119,
place = {United States},
year = {2016},
month = {5}
}

Works referenced in this record:

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001
  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156