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Title: Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [3] ; ORCiD logo [4] ;  [4] ;  [4] ;  [4]
  1. IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA
  2. IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
  3. IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, USA
  4. TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821, USA
Publication Date:
Grant/Contract Number:
AC02- 98CH10886
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 15; Related Information: CHORUS Timestamp: 2018-02-14 21:36:20; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1421095