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Title: Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer

Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [5] ;  [6] ;  [2]
  1. Graduate School of Biomedical Engineering, Tohoku University, Sendai 980-8579, Japan, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan, CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
  2. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan, CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
  3. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
  4. Graduate School of Biomedical Engineering, Tohoku University, Sendai 980-8579, Japan, CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
  5. CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan, Tokyo University of Technology, Hachioji, Tokyo 192-0982, Japan
  6. Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, USA
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 119 Journal Issue: 15; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1421094

Tadaki, Daisuke, Ma, Teng, Zhang, Jinyu, Iino, Shohei, Hirano-Iwata, Ayumi, Kimura, Yasuo, Rosenberg, Richard A., and Niwano, Michio. Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer. United States: N. p., Web. doi:10.1063/1.4946888.
Tadaki, Daisuke, Ma, Teng, Zhang, Jinyu, Iino, Shohei, Hirano-Iwata, Ayumi, Kimura, Yasuo, Rosenberg, Richard A., & Niwano, Michio. Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer. United States. doi:10.1063/1.4946888.
Tadaki, Daisuke, Ma, Teng, Zhang, Jinyu, Iino, Shohei, Hirano-Iwata, Ayumi, Kimura, Yasuo, Rosenberg, Richard A., and Niwano, Michio. 2016. "Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer". United States. doi:10.1063/1.4946888.
@article{osti_1421094,
title = {Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer},
author = {Tadaki, Daisuke and Ma, Teng and Zhang, Jinyu and Iino, Shohei and Hirano-Iwata, Ayumi and Kimura, Yasuo and Rosenberg, Richard A. and Niwano, Michio},
abstractNote = {},
doi = {10.1063/1.4946888},
journal = {Journal of Applied Physics},
number = 15,
volume = 119,
place = {United States},
year = {2016},
month = {4}
}

Works referenced in this record:

Doped organic semiconductors: Physics and application in light emitting diodes
journal, September 2003

Controlling Electrical Properties of Conjugated Polymers via a Solution-Based p-Type Doping
journal, September 2008
  • Yim, Keng-Hoong; Whiting, Gregory L.; Murphy, Craig E.
  • Advanced Materials, Vol. 20, Issue 17, p. 3319-3324
  • DOI: 10.1002/adma.200800735

Thin-Film Permeation-Barrier Technology for Flexible Organic Light-Emitting Devices
journal, January 2004
  • Lewis, J.S.; Weaver, M.S.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 10, Issue 1, p. 45-57
  • DOI: 10.1109/JSTQE.2004.824072