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Title: Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer

Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [5] ;  [6] ;  [2]
  1. Graduate School of Biomedical Engineering, Tohoku University, Sendai 980-8579, Japan, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan, CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
  2. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan, CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
  3. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
  4. Graduate School of Biomedical Engineering, Tohoku University, Sendai 980-8579, Japan, CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
  5. CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan, Tokyo University of Technology, Hachioji, Tokyo 192-0982, Japan
  6. Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, USA
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 15; Related Information: CHORUS Timestamp: 2018-04-20 13:50:17; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1421094