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Title: Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer

Abstract

Organic thin film transistors (OTFTs) have been explored because of their advantageous features such as light-weight, flexible, and large-area. For more practical application of organic electronic devices, it is very important to realize OTFTs that are composed only of organic materials. As such, in this paper, we have fabricated p+-i-p+ type of OTFTs in which an intrinsic (i) regioregular poly (3-hexylthiophene) (P3HT) layer is used as the active layer and highly doped p-type (p+) P3HT is used as the source and drain electrodes. The 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) was used as the p-type dopant. A fabricating method of p+-i-p+ OTFTs has been developed by using SiO2 and aluminum films as capping layers for micro-scaled patterning of the p+-P3HT electrodes. The characteristics of the OTFTs were examined using the photoelectron spectroscopy and electrical measurements. We demonstrated that the fabricated p+-i-p+ OTFTs work with carrier injection through a built-in potential at p+/i interfaces. We found that the p+-i-p+ OTFTs exhibit better FET characteristics than the conventional P3HT-OTFT with metal (Au) electrodes, indicating that the influence of a carrier injection barrier at the interface between the electrode and the active layer was suppressed by replacing the metal electrodes with p+-P3HT layers.

Authors:
 [1];  [1];  [2];  [2];  [1];  [3];  [4];  [1]
  1. Tohoku Univ., Sendai, (Japan); CREST, Japan Science and Technology Agency, Kawaguchi, Saitama (Japan)
  2. Tohoku Univ., Sendai, (Japan)
  3. CREST, Japan Science and Technology Agency, Kawaguchi, Saitama (Japan); Tokyo Univ. of Technology (Japan)
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
OSTI Identifier:
1391622
Alternate Identifier(s):
OSTI ID: 1421094
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 15; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Tadaki, Daisuke, Ma, Teng, Zhang, Jinyu, Iino, Shohei, Hirano-Iwata, Ayumi, Kimura, Yasuo, Rosenberg, Richard A., and Niwano, Michio. Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer. United States: N. p., 2016. Web. doi:10.1063/1.4946888.
Tadaki, Daisuke, Ma, Teng, Zhang, Jinyu, Iino, Shohei, Hirano-Iwata, Ayumi, Kimura, Yasuo, Rosenberg, Richard A., & Niwano, Michio. Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer. United States. https://doi.org/10.1063/1.4946888
Tadaki, Daisuke, Ma, Teng, Zhang, Jinyu, Iino, Shohei, Hirano-Iwata, Ayumi, Kimura, Yasuo, Rosenberg, Richard A., and Niwano, Michio. Tue . "Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer". United States. https://doi.org/10.1063/1.4946888. https://www.osti.gov/servlets/purl/1391622.
@article{osti_1391622,
title = {Fabrication and characterization of p+-i-p+ type organic thin film transistors with electrodes of highly doped polymer},
author = {Tadaki, Daisuke and Ma, Teng and Zhang, Jinyu and Iino, Shohei and Hirano-Iwata, Ayumi and Kimura, Yasuo and Rosenberg, Richard A. and Niwano, Michio},
abstractNote = {Organic thin film transistors (OTFTs) have been explored because of their advantageous features such as light-weight, flexible, and large-area. For more practical application of organic electronic devices, it is very important to realize OTFTs that are composed only of organic materials. As such, in this paper, we have fabricated p+-i-p+ type of OTFTs in which an intrinsic (i) regioregular poly (3-hexylthiophene) (P3HT) layer is used as the active layer and highly doped p-type (p+) P3HT is used as the source and drain electrodes. The 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) was used as the p-type dopant. A fabricating method of p+-i-p+ OTFTs has been developed by using SiO2 and aluminum films as capping layers for micro-scaled patterning of the p+-P3HT electrodes. The characteristics of the OTFTs were examined using the photoelectron spectroscopy and electrical measurements. We demonstrated that the fabricated p+-i-p+ OTFTs work with carrier injection through a built-in potential at p+/i interfaces. We found that the p+-i-p+ OTFTs exhibit better FET characteristics than the conventional P3HT-OTFT with metal (Au) electrodes, indicating that the influence of a carrier injection barrier at the interface between the electrode and the active layer was suppressed by replacing the metal electrodes with p+-P3HT layers.},
doi = {10.1063/1.4946888},
journal = {Journal of Applied Physics},
number = 15,
volume = 119,
place = {United States},
year = {Tue Apr 19 00:00:00 EDT 2016},
month = {Tue Apr 19 00:00:00 EDT 2016}
}

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Works referencing / citing this record:

Doping: A Key Enabler for Organic Transistors
journal, August 2018


Doping: A Key Enabler for Organic Transistors
journal, July 2019