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Title: Anharmonicity in light scattering by optical phonons in GaAs 1- x Bi x

Authors:
ORCiD logo [1] ;  [2] ; ORCiD logo [2] ;  [3] ; ORCiD logo [1]
  1. Indian Institute of Science Education and Research Thiruvananthapuram (IISERTVM), CET Campus, Thiruvananthapuram, Kerala 695016, India
  2. Jawaharlal Nehru Center for Advanced Scientific Research (JNCASR), Bangalore 560064, India
  3. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401, USA
Publication Date:
Grant/Contract Number:
AC36-08GO28308
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 119 Journal Issue: 20; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1421082

Joshya, R. S., Rajaji, V., Narayana, Chandrabhas, Mascarenhas, A., and Kini, R. N.. Anharmonicity in light scattering by optical phonons in GaAs 1- x Bi x. United States: N. p., Web. doi:10.1063/1.4952381.
Joshya, R. S., Rajaji, V., Narayana, Chandrabhas, Mascarenhas, A., & Kini, R. N.. Anharmonicity in light scattering by optical phonons in GaAs 1- x Bi x. United States. doi:10.1063/1.4952381.
Joshya, R. S., Rajaji, V., Narayana, Chandrabhas, Mascarenhas, A., and Kini, R. N.. 2016. "Anharmonicity in light scattering by optical phonons in GaAs 1- x Bi x". United States. doi:10.1063/1.4952381.
@article{osti_1421082,
title = {Anharmonicity in light scattering by optical phonons in GaAs 1- x Bi x},
author = {Joshya, R. S. and Rajaji, V. and Narayana, Chandrabhas and Mascarenhas, A. and Kini, R. N.},
abstractNote = {},
doi = {10.1063/1.4952381},
journal = {Journal of Applied Physics},
number = 20,
volume = 119,
place = {United States},
year = {2016},
month = {5}
}