Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography

Bhattarai, Suchit; Neureuther, Andrew R.; Naulleau, Patrick P.

doi:10.1116/1.4991054

Title: Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography

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Abstract

In this paper, the influence of the absorption shot noise on line edge roughness (LER) of photoresists for extreme ultraviolet (EUV) lithography is studied experimentally through the comparative analysis of LER obtained by EUV (92 eV photons) and 100 keV e-beam lithography. Techniques for performing EUV and e-beam lithography with a matched image log slope for a fair comparison of LER values are described. Measurements of absorption of 100 keV electrons estimated through a transmissive electron energy loss spectroscopy measurement with a 120 keV electron beam showed that despite having access to core levels in the material (e.g., 284 eV edge in carbon), these electrons mostly just excite the energy levels less than 100 eV in the resist, with a mean deposited energy of 35 eV. By combining the incident flux and the absorption probabilities, the absorbed quanta for patterning of 50 nm half-pitch line/space features was found to be similar between the two patterning technologies.

Authors:

Bhattarai, Suchit ^[1]; Neureuther, Andrew R. ^[1]; Naulleau, Patrick P. ^[2]

Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Center for X-Ray Optics

Publication Date:: Wed Nov 01 00:00:00 EDT 2017

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE

OSTI Identifier:: 1466709

Alternate Identifier(s):: OSTI ID: 1421080

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics

Additional Journal Information:: Journal Volume: 35; Journal Issue: 6; Journal ID: ISSN 2166-2746

Publisher:: American Vacuum Society/AIP

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats


                    Bhattarai, Suchit, Neureuther, Andrew R., and Naulleau, Patrick P. Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography.  United States: N. p., 2017. 
Web.  doi:10.1116/1.4991054.

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                    Bhattarai, Suchit, Neureuther, Andrew R., & Naulleau, Patrick P. Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography.  United States.  https://doi.org/10.1116/1.4991054

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                    Bhattarai, Suchit, Neureuther, Andrew R., and Naulleau, Patrick P. Wed .  
"Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography".  United States.  https://doi.org/10.1116/1.4991054.  https://www.osti.gov/servlets/purl/1466709.

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@article{osti_1466709,

  title        = {Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography},

  author       = {Bhattarai, Suchit and Neureuther, Andrew R. and Naulleau, Patrick P.},

  abstractNote = {In this paper, the influence of the absorption shot noise on line edge roughness (LER) of photoresists for extreme ultraviolet (EUV) lithography is studied experimentally through the comparative analysis of LER obtained by EUV (92 eV photons) and 100 keV e-beam lithography. Techniques for performing EUV and e-beam lithography with a matched image log slope for a fair comparison of LER values are described. Measurements of absorption of 100 keV electrons estimated through a transmissive electron energy loss spectroscopy measurement with a 120 keV electron beam showed that despite having access to core levels in the material (e.g., 284 eV edge in carbon), these electrons mostly just excite the energy levels less than 100 eV in the resist, with a mean deposited energy of 35 eV. By combining the incident flux and the absorption probabilities, the absorbed quanta for patterning of 50 nm half-pitch line/space features was found to be similar between the two patterning technologies.},

  doi          = {10.1116/1.4991054},

  journal      = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},

  number       = 6,

  volume       = 35,

  place        = {United States},

  year         = {Wed Nov 01 00:00:00 EDT 2017},

  month        = {Wed Nov 01 00:00:00 EDT 2017}

}

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