Electronic structure of monolayer 1T'-MoTe2 grown by molecular beam epitaxy

Tang, Shujie; Zhang, Chaofan; Jia, Chunjing; Ryu, Hyejin; Hwang, Choongyu; Hashimoto, Makoto; Lu, Donghui; Liu, Zhi; Devereaux, Thomas P.; Shen, Zhi-Xun; Mo, Sung-Kwan

doi:10.1063/1.5004700

Title: Electronic structure of monolayer 1T'-MoTe₂ grown by molecular beam epitaxy

Abstract

Monolayer transition metal dichalcogenides (TMDCs) in the 1T' structural phase have drawn a great deal of attention due to the prediction of quantum spin Hall insulator states. The band inversion and the concomitant changes in the band topology induced by the structural distortion from 1T to 1T' phases are well established. However, the bandgap opening due to the strong spin-orbit coupling (SOC) is only verified for 1T'-WTe₂ recently and still debated for other TMDCs. Here we report a successful growth of high-quality monolayer 1T'-MoTe₂ on a bilayer graphene substrate through molecular beam epitaxy. Using in situ angle-resolved photoemission spectroscopy (ARPES), we have investigated the low-energy electronic structure and Fermi surface topology. The SOC-induced breaking of the band degeneracy points between the valence and conduction bands is clearly observed by ARPES. However, the strength of SOC is found to be insufficient to open a bandgap, which makes monolayer 1T'-MoTe₂ on bilayer graphene a semimetal.

Authors:

Tang, Shujie ^[1]; Zhang, Chaofan ^[2]; Jia, Chunjing ^[3]; Ryu, Hyejin ^[4];

^[5]; Hashimoto, Makoto ^[6]; Lu, Donghui ^[6]; Liu, Zhi ^[7]; Devereaux, Thomas P. ^[3]; Shen, Zhi-Xun ^[3];

^[8]

SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Chinese Academy of Sciences, Shanghai (China); Shanghai Tech Univ., Shanghai (China)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); National Univ. of Defense Technology, Changsha (China)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Max Planck-POSTECH/Hsinch Center for Complex Phase Materials, Gyeongbuk (South Korea)
Pusan National Univ., Busan (South Korea)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Chinese Academy of Sciences, Shanghai (China); Shanghai Tech Univ., Shanghai (China)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Publication Date:: Tue Nov 14 00:00:00 EST 2017

Research Org.:: SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1437578

Alternate Identifier(s):: OSTI ID: 1421017; OSTI ID: 1435115

Grant/Contract Number:: FA9550-14-1-0277; AC02-76SF00515; AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: APL Materials

Additional Journal Information:: Journal Volume: 6; Journal Issue: 2; Journal ID: ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Tang, Shujie, Zhang, Chaofan, Jia, Chunjing, Ryu, Hyejin, Hwang, Choongyu, Hashimoto, Makoto, Lu, Donghui, Liu, Zhi, Devereaux, Thomas P., Shen, Zhi-Xun, and Mo, Sung-Kwan. Electronic structure of monolayer 1T'-MoTe2 grown by molecular beam epitaxy.  United States: N. p., 2017. 
Web.  doi:10.1063/1.5004700.

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                    Tang, Shujie, Zhang, Chaofan, Jia, Chunjing, Ryu, Hyejin, Hwang, Choongyu, Hashimoto, Makoto, Lu, Donghui, Liu, Zhi, Devereaux, Thomas P., Shen, Zhi-Xun, & Mo, Sung-Kwan. Electronic structure of monolayer 1T'-MoTe2 grown by molecular beam epitaxy.  United States.  https://doi.org/10.1063/1.5004700

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                    Tang, Shujie, Zhang, Chaofan, Jia, Chunjing, Ryu, Hyejin, Hwang, Choongyu, Hashimoto, Makoto, Lu, Donghui, Liu, Zhi, Devereaux, Thomas P., Shen, Zhi-Xun, and Mo, Sung-Kwan. Tue .  
"Electronic structure of monolayer 1T'-MoTe2 grown by molecular beam epitaxy".  United States.  https://doi.org/10.1063/1.5004700.  https://www.osti.gov/servlets/purl/1437578.

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@article{osti_1437578,

  title        = {Electronic structure of monolayer 1T'-MoTe2 grown by molecular beam epitaxy},

  author       = {Tang, Shujie and Zhang, Chaofan and Jia, Chunjing and Ryu, Hyejin and Hwang, Choongyu and Hashimoto, Makoto and Lu, Donghui and Liu, Zhi and Devereaux, Thomas P. and Shen, Zhi-Xun and Mo, Sung-Kwan},

  abstractNote = {Monolayer transition metal dichalcogenides (TMDCs) in the 1T' structural phase have drawn a great deal of attention due to the prediction of quantum spin Hall insulator states. The band inversion and the concomitant changes in the band topology induced by the structural distortion from 1T to 1T' phases are well established. However, the bandgap opening due to the strong spin-orbit coupling (SOC) is only verified for 1T'-WTe2 recently and still debated for other TMDCs. Here we report a successful growth of high-quality monolayer 1T'-MoTe2 on a bilayer graphene substrate through molecular beam epitaxy. Using in situ angle-resolved photoemission spectroscopy (ARPES), we have investigated the low-energy electronic structure and Fermi surface topology. The SOC-induced breaking of the band degeneracy points between the valence and conduction bands is clearly observed by ARPES. However, the strength of SOC is found to be insufficient to open a bandgap, which makes monolayer 1T'-MoTe2 on bilayer graphene a semimetal.},

  doi          = {10.1063/1.5004700},

  journal      = {APL Materials},

  number       = 2,

  volume       = 6,

  place        = {United States},

  year         = {Tue Nov 14 00:00:00 EST 2017},

  month        = {Tue Nov 14 00:00:00 EST 2017}

}

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Journal Article:

Free Publicly Available Full Text

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Accepted Manuscript (DOE)

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https://doi.org/10.1063/1.5004700

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Cited by: 34 works

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TABLE I: Gap sizes derived from different calculation methods and experimental measurements.

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Works referenced in this record:

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Works referencing / citing this record:

Substrate temperature dependence of the crystalline quality for the synthesis of pure-phase MoTe ₂ on graphene/6 H -SiC(0001) by molecular beam epitaxy
journal, December 2019

Castelino, Roshan; Pham, Trung T.; Felten, Alexandre
Nanotechnology, Vol. 31, Issue 11
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Mechanical characterization of phase-changed single-layer MoS ₂ sheets
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Jung, Jaehyuck; Bark, Hunyoung; Byun, Doyoung
2D Materials, Vol. 6, Issue 2
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Experimental progress on layered topological semimetals
journal, April 2019

Ma, Junchao; Deng, Ke; Zheng, Lu
2D Materials, Vol. 6, Issue 3
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Thickness dependent electronic structure of exfoliated mono- and few-layer $1 T^{'} − {MoTe}_{2}$
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Experimental Progress on Layered Topological Semimetals
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Ma, Junchao; Deng, Ke; Zheng, Lu
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Figures / Tables found in this record:

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Similar Records

Title: Electronic structure of monolayer 1T'-MoTe2 grown by molecular beam epitaxy

Abstract

Citation Formats

Figures / Tables:

Angle-resolved photoemission spectroscopy for the study of two-dimensional materials journal, March 2017

Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe 2 journal, July 2014

Large, non-saturating magnetoresistance in WTe2 journal, September 2014

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 journal, December 2013

Emerging Photoluminescence in Monolayer MoS2 journal, April 2010

Fully gapped topological surface states in Bi2Se3 films induced by a d-wave high-temperature superconductor journal, September 2013

Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy journal, August 2017

Spin-resolved photoemission study of epitaxially grown MoSe 2 and WSe 2 thin films journal, September 2016

Bandgap opening in few-layered monoclinic MoTe2 journal, May 2015

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells journal, December 2006

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates journal, January 2013

Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2 journal, September 2016

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides journal, February 2017

Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling journal, December 2006

Fermi Arcs and Their Topological Character in the Candidate Type-II Weyl Semimetal MoTe 2 journal, August 2016

Monolayer Single-Crystal 1T′-MoTe 2 Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect journal, June 2016

Edge conduction in monolayer WTe2 journal, April 2017

Evidence of Electron-Hole Imbalance in WTe 2 from High-Resolution Angle-Resolved Photoemission Spectroscopy journal, August 2017

Origins of the structural phase transitions in MoTe 2 and WTe 2 journal, May 2017

2D materials and van der Waals heterostructures journal, July 2016

Quantum spin Hall effect in two-dimensional transition metal dichalcogenides journal, November 2014

MoTe 2 : An uncompensated semimetal with extremely large magnetoresistance journal, June 2017

The valley Hall effect in MoS2 transistors journal, June 2014

Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor journal, October 2014

Signature of type-II Weyl semimetal phase in MoTe2 journal, January 2017

Control of valley polarization in monolayer MoS2 by optical helicity journal, June 2012

Prediction of Weyl semimetal in orthorhombic MoTe 2 journal, October 2015

Understanding topological phase transition in monolayer transition metal dichalcogenides journal, March 2016

Quantum spin Hall state in monolayer 1T'-WTe2 journal, June 2017

Fully gapped topological surface states in Bi$_2$Se$_3$ films induced by a d-wave high-temperature superconductor text, January 2013

2D materials and van der Waals heterostructures text, January 2016

Edge conduction in monolayer WTe2 text, January 2016

Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling text, January 2006

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells text, January 2006

Substrate temperature dependence of the crystalline quality for the synthesis of pure-phase MoTe 2 on graphene/6 H -SiC(0001) by molecular beam epitaxy journal, December 2019

Mechanical characterization of phase-changed single-layer MoS 2 sheets journal, February 2019

Experimental progress on layered topological semimetals journal, April 2019

Thickness dependent electronic structure of exfoliated mono- and few-layer 1 T ′ − MoTe 2 journal, October 2018

Experimental Progress on Layered Topological Semimetals text, January 2019

Title: Electronic structure of monolayer 1T'-MoTe₂ grown by molecular beam epitaxy

Angle-resolved photoemission spectroscopy for the study of two-dimensional materials
journal, March 2017

Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe ₂
journal, July 2014

Large, non-saturating magnetoresistance in WTe2
journal, September 2014

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
journal, December 2013

Emerging Photoluminescence in Monolayer MoS₂
journal, April 2010

Fully gapped topological surface states in Bi2Se3 films induced by a d-wave high-temperature superconductor
journal, September 2013

Temperature dependence of band gap in MoSe2 grown by molecular beam epitaxy
journal, August 2017

Spin-resolved photoemission study of epitaxially grown MoSe ₂ and WSe ₂ thin films
journal, September 2016

Bandgap opening in few-layered monoclinic MoTe2
journal, May 2015

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
journal, December 2006

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates
journal, January 2013

Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2
journal, September 2016

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides
journal, February 2017

Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
journal, December 2006

Fermi Arcs and Their Topological Character in the Candidate Type-II Weyl Semimetal ${MoTe}_{2}$
journal, August 2016

Monolayer Single-Crystal 1T′-MoTe ₂ Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect
journal, June 2016

Edge conduction in monolayer WTe2
journal, April 2017

Evidence of Electron-Hole Imbalance in WTe ₂ from High-Resolution Angle-Resolved Photoemission Spectroscopy
journal, August 2017

Origins of the structural phase transitions in ${MoTe}_{2}$ and ${WTe}_{2}$
journal, May 2017

2D materials and van der Waals heterostructures
journal, July 2016

Quantum spin Hall effect in two-dimensional transition metal dichalcogenides
journal, November 2014

${MoTe}_{2}$ : An uncompensated semimetal with extremely large magnetoresistance
journal, June 2017

The valley Hall effect in MoS2 transistors
journal, June 2014

Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor
journal, October 2014

Signature of type-II Weyl semimetal phase in MoTe2
journal, January 2017

Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012

Prediction of Weyl semimetal in orthorhombic ${MoTe}_{2}$
journal, October 2015

Understanding topological phase transition in monolayer transition metal dichalcogenides
journal, March 2016

Quantum spin Hall state in monolayer 1T'-WTe2
journal, June 2017

Fully gapped topological surface states in Bi$_2$Se$_3$ films induced by a d-wave high-temperature superconductor
text, January 2013

2D materials and van der Waals heterostructures
text, January 2016

Edge conduction in monolayer WTe2
text, January 2016

Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
text, January 2006

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
text, January 2006

Substrate temperature dependence of the crystalline quality for the synthesis of pure-phase MoTe ₂ on graphene/6 H -SiC(0001) by molecular beam epitaxy
journal, December 2019

Mechanical characterization of phase-changed single-layer MoS ₂ sheets
journal, February 2019

Experimental progress on layered topological semimetals
journal, April 2019

Thickness dependent electronic structure of exfoliated mono- and few-layer $1 T^{'} − {MoTe}_{2}$
journal, October 2018

Experimental Progress on Layered Topological Semimetals
text, January 2019