Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces

Abstract

Thin film In2O3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film, and between current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In2O3. Furthermore, a low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes in the contact resistance.

Authors:
 [1];  [1]
+ Show Author Affiliations
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Materials Sciences and Engineering Division
OSTI Identifier:
1361785
Alternate Identifier(s):
OSTI ID: 1352920; OSTI ID: 1420716
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 5 Journal Issue: 4; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Veal, B. W., and Eastman, J. A. Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces. United States: N. p., 2017. Web. doi:10.1063/1.4977205.
Copy to clipboard
Veal, B. W., & Eastman, J. A. Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces. United States. https://doi.org/10.1063/1.4977205
Copy to clipboard
Veal, B. W., and Eastman, J. A. Wed . "Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces". United States. https://doi.org/10.1063/1.4977205.
Copy to clipboard
@article{osti_1361785,
title = {Conduction in In2O3/YSZ heterostructures: Complex interplay between electrons and ions, mediated by interfaces},
author = {Veal, B. W. and Eastman, J. A.},
abstractNote = {Thin film In2O3/YSZ heterostructures exhibit significant increases in electrical conductance with time when small in-plane electric fields are applied. Contact resistances between the current electrodes and film, and between current electrodes and substrate are responsible for the behavior. With an in-plane electric field, different field profiles are established in the two materials, with the result that oxygen ions can be driven across the heterointerface, altering the doping of the n-type In2O3. Furthermore, a low frequency inductive feature observed in AC impedance spectroscopy measurements under DC bias conditions was found to be due to frequency-dependent changes in the contact resistance.},
doi = {10.1063/1.4977205},
journal = {APL Materials},
number = 4,
volume = 5,
place = {United States},
year = {Wed Mar 01 00:00:00 EST 2017},
month = {Wed Mar 01 00:00:00 EST 2017}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4977205
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Coexistence of magnetic order and two-dimensional superconductivity at LaAlO3/SrTiO3 interfaces
journal, September 2011

  • Li, Lu; Richter, C.; Mannhart, J.
  • Nature Physics, Vol. 7, Issue 10, p. 762-766
  • DOI: 10.1038/nphys2080

Crystal-Facet-Dependent Metallization in Electrolyte-Gated Rutile TiO 2 Single Crystals
journal, August 2013

  • Schladt, Thomas D.; Graf, Tanja; Aetukuri, Nagaphani B.
  • ACS Nano, Vol. 7, Issue 9
  • DOI: 10.1021/nn403340d

Magnetic effects at the interface between non-magnetic oxides
journal, June 2007

  • Brinkman, A.; Huijben, M.; van Zalk, M.
  • Nature Materials, Vol. 6, Issue 7, p. 493-496
  • DOI: 10.1038/nmat1931

Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
journal, June 2016

  • Veal, Boyd W.; Kim, Seong Keun; Zapol, Peter
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms11892

The Dynamic Phase Transition Modulation of Ion-Liquid Gating VO 2 Thin Film: Formation, Diffusion, and Recovery of Oxygen Vacancies
journal, March 2016

  • Chen, Shi; Wang, Xi jun; Fan, Lele
  • Advanced Functional Materials, Vol. 26, Issue 20
  • DOI: 10.1002/adfm.201505399

Oxide Heterostructure Resistive Memory
journal, May 2013

  • Yang, Yuchao; Choi, ShinHyun; Lu, Wei
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl401287w

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation
journal, March 2013

Electrochemically Induced Transformations of Vanadium Dioxide Nanocrystals
journal, September 2016

Oxygen level: the dominant of resistive switching characteristics in cerium oxide thin films
journal, August 2012

Metallization of Epitaxial VO 2 Films by Ionic Liquid Gating through Initially Insulating TiO 2 Layers
journal, August 2016

Double-Layer in Ionic Liquids:  Paradigm Change?
journal, May 2007

  • Kornyshev, Alexei A.
  • The Journal of Physical Chemistry B, Vol. 111, Issue 20
  • DOI: 10.1021/jp067857o

Understanding Artifacts in Impedance Spectroscopy
journal, November 2014

  • Veal, B. W.; Baldo, P. M.; Paulikas, A. P.
  • Journal of The Electrochemical Society, Vol. 162, Issue 1
  • DOI: 10.1149/2.0791501jes

Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer
journal, January 2014

  • Singh, Mandeep; Palazzo, Gerardo; Romanazzi, Giuseppe
  • Faraday Discuss., Vol. 174
  • DOI: 10.1039/c4fd00081a
    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: