Radiative and interfacial recombination in CdTe heterostructures

Swartz, C. H.; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H.; Zaunbrecher, K. N.

doi:10.1063/1.4902926

Title: Radiative and interfacial recombination in CdTe heterostructures

Abstract

Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 1010 cm−2 and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10−10 cm3s−1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

Authors:

Swartz, C. H.; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.;

;

; Zaunbrecher, K. N.

Publication Date:: Tue Dec 02 00:00:00 EST 2014

Sponsoring Org.:: USDOE

OSTI Identifier:: 1420708

Grant/Contract Number:: DEAC36-08GO28308

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 105 Journal Issue: 22; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Swartz, C. H., Edirisooriya, M., LeBlanc, E. G., Noriega, O. C., Jayathilaka, P. A. R. D., Ogedengbe, O. S., Hancock, B. L., Holtz, M., Myers, T. H., and Zaunbrecher, K. N. Radiative and interfacial recombination in CdTe heterostructures.  United States: N. p., 2014. 
Web.  doi:10.1063/1.4902926.

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                    Swartz, C. H., Edirisooriya, M., LeBlanc, E. G., Noriega, O. C., Jayathilaka, P. A. R. D., Ogedengbe, O. S., Hancock, B. L., Holtz, M., Myers, T. H., & Zaunbrecher, K. N. Radiative and interfacial recombination in CdTe heterostructures.  United States.  https://doi.org/10.1063/1.4902926

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                    Swartz, C. H., Edirisooriya, M., LeBlanc, E. G., Noriega, O. C., Jayathilaka, P. A. R. D., Ogedengbe, O. S., Hancock, B. L., Holtz, M., Myers, T. H., and Zaunbrecher, K. N. Tue .  
"Radiative and interfacial recombination in CdTe heterostructures".  United States.  https://doi.org/10.1063/1.4902926.

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@article{osti_1420708,

  title        = {Radiative and interfacial recombination in CdTe heterostructures},

  author       = {Swartz, C. H. and Edirisooriya, M. and LeBlanc, E. G. and Noriega, O. C. and Jayathilaka, P. A. R. D. and Ogedengbe, O. S. and Hancock, B. L. and Holtz, M. and Myers, T. H. and Zaunbrecher, K. N.},

  abstractNote = {Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 1010 cm−2 and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10−10 cm3s−1. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.},

  doi          = {10.1063/1.4902926},

  journal      = {Applied Physics Letters},

  number       = 22,

  volume       = 105,

  place        = {United States},

  year         = {Tue Dec 02 00:00:00 EST 2014},

  month        = {Tue Dec 02 00:00:00 EST 2014}

}

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Title: Radiative and interfacial recombination in CdTe heterostructures

Abstract

Citation Formats

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