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Title: Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
  2. Engineering Science Directorate, Army Research Office, P.O. Box 12211, Research Triangle Park, North Carolina 27703, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1420705
Grant/Contract Number:  
AR0000299
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 105 Journal Issue: 22; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Bryan, Zachary, Bryan, Isaac, Gaddy, Benjamin E., Reddy, Pramod, Hussey, Lindsay, Bobea, Milena, Guo, Wei, Hoffmann, Marc, Kirste, Ronny, Tweedie, James, Gerhold, Michael, Irving, Douglas L., Sitar, Zlatko, and Collazo, Ramón. Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. United States: N. p., 2014. Web. doi:10.1063/1.4903058.
Bryan, Zachary, Bryan, Isaac, Gaddy, Benjamin E., Reddy, Pramod, Hussey, Lindsay, Bobea, Milena, Guo, Wei, Hoffmann, Marc, Kirste, Ronny, Tweedie, James, Gerhold, Michael, Irving, Douglas L., Sitar, Zlatko, & Collazo, Ramón. Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. United States. doi:10.1063/1.4903058.
Bryan, Zachary, Bryan, Isaac, Gaddy, Benjamin E., Reddy, Pramod, Hussey, Lindsay, Bobea, Milena, Guo, Wei, Hoffmann, Marc, Kirste, Ronny, Tweedie, James, Gerhold, Michael, Irving, Douglas L., Sitar, Zlatko, and Collazo, Ramón. Mon . "Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN". United States. doi:10.1063/1.4903058.
@article{osti_1420705,
title = {Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN},
author = {Bryan, Zachary and Bryan, Isaac and Gaddy, Benjamin E. and Reddy, Pramod and Hussey, Lindsay and Bobea, Milena and Guo, Wei and Hoffmann, Marc and Kirste, Ronny and Tweedie, James and Gerhold, Michael and Irving, Douglas L. and Sitar, Zlatko and Collazo, Ramón},
abstractNote = {},
doi = {10.1063/1.4903058},
journal = {Applied Physics Letters},
number = 22,
volume = 105,
place = {United States},
year = {2014},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4903058

Citation Metrics:
Cited by: 20 works
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Works referenced in this record:

Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
journal, May 2005

  • Nam, K. B.; Nakarmi, M. L.; Lin, J. Y.
  • Applied Physics Letters, Vol. 86, Issue 22, Article No. 222108
  • DOI: 10.1063/1.1943489