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Title: Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

Authors:
 [1];  [2];  [1];  [1];  [1];  [3];  [4];  [3];  [1]
  1. U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375
  2. American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036
  3. Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215
  4. Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1420693
Grant/Contract Number:  
AC02-98CH10886
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology A
Additional Journal Information:
Journal Name: Journal of Vacuum Science and Technology A Journal Volume: 35 Journal Issue: 3; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English

Citation Formats

Nepal, Neeraj, Anderson, Virginia R., Johnson, Scooter D., Downey, Brian P., Meyer, David J., DeMasi, Alexander, Robinson, Zachary R., Ludwig, Karl F., and Eddy, Jr., Charles R. Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods. United States: N. p., 2017. Web. doi:10.1116/1.4978026.
Nepal, Neeraj, Anderson, Virginia R., Johnson, Scooter D., Downey, Brian P., Meyer, David J., DeMasi, Alexander, Robinson, Zachary R., Ludwig, Karl F., & Eddy, Jr., Charles R. Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods. United States. https://doi.org/10.1116/1.4978026
Nepal, Neeraj, Anderson, Virginia R., Johnson, Scooter D., Downey, Brian P., Meyer, David J., DeMasi, Alexander, Robinson, Zachary R., Ludwig, Karl F., and Eddy, Jr., Charles R. Mon . "Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods". United States. https://doi.org/10.1116/1.4978026.
@article{osti_1420693,
title = {Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods},
author = {Nepal, Neeraj and Anderson, Virginia R. and Johnson, Scooter D. and Downey, Brian P. and Meyer, David J. and DeMasi, Alexander and Robinson, Zachary R. and Ludwig, Karl F. and Eddy, Jr., Charles R.},
abstractNote = {},
doi = {10.1116/1.4978026},
journal = {Journal of Vacuum Science and Technology A},
number = 3,
volume = 35,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2017},
month = {Mon May 01 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1116/1.4978026

Citation Metrics:
Cited by: 11 works
Citation information provided by
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Works referenced in this record:

Nucleation and growth of InN thin films using conventional and pulsed MOVPE
journal, December 2004


RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
journal, May 2003

  • Nanishi, Yasushi; Saito, Yoshiki; Yamaguchi, Tomohiro
  • Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 5A
  • DOI: 10.1143/JJAP.42.2549

In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates
journal, June 2011

  • Devloo-Casier, K.; Dendooven, J.; Ludwig, K. F.
  • Applied Physics Letters, Vol. 98, Issue 23
  • DOI: 10.1063/1.3598433

Synchrotron x-ray scattering study of lattice relaxation in InN epitaxial layers on sapphire(0001) during dc sputter growth
journal, November 2002

  • Lee, Ik Jae; Kim, Jin Woo; Hwang, Yoon-Hwae
  • Journal of Applied Physics, Vol. 92, Issue 10
  • DOI: 10.1063/1.1515952

Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
journal, March 2013

  • Nepal, Neeraj; Mahadik, Nadeemullah A.; Nyakiti, Luke O.
  • Crystal Growth & Design, Vol. 13, Issue 4
  • DOI: 10.1021/cg3016172

When group-III nitrides go infrared: New properties and perspectives
journal, July 2009


Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
journal, August 2013

  • Nepal, N.; Qadri, S. B.; Hite, J. K.
  • Applied Physics Letters, Vol. 103, Issue 8
  • DOI: 10.1063/1.4818792

Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and Al x Ga 1−x N thin films at low temperatures
journal, January 2014

  • Ozgit-Akgun, Cagla; Goldenberg, Eda; Okyay, Ali Kemal
  • J. Mater. Chem. C, Vol. 2, Issue 12
  • DOI: 10.1039/c3tc32418d

Probing surface and interface morphology with Grazing Incidence Small Angle X-Ray Scattering
journal, August 2009


GaN-Based RF Power Devices and Amplifiers
journal, February 2008


Structural evolution of ZnO/sapphire(001) heteroepitaxy studied by real time synchrotron x-ray scattering
journal, July 2000

  • Park, Sang Il; Cho, Tae Sik; Doh, Seok Joo
  • Applied Physics Letters, Vol. 77, Issue 3
  • DOI: 10.1063/1.126972

Growth and applications of Group III-nitrides
journal, October 1998


In Situ X-ray Fluorescence Measurements During Atomic Layer Deposition: Nucleation and Growth of TiO 2 on Planar Substrates and in Nanoporous Films
journal, March 2011

  • Dendooven, Jolien; Pulinthanathu Sree, Sreeprasanth; De Keyser, Koen
  • The Journal of Physical Chemistry C, Vol. 115, Issue 14
  • DOI: 10.1021/jp111314b

Epitaxial growth of InN film on intermediate oxide buffer layer by RF-MOMBE
journal, August 2011


Perspectives on future directions in III-N semiconductor research
journal, September 2013

  • Eddy, Charles R.; Nepal, Neeraj; Hite, Jennifer K.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5
  • DOI: 10.1116/1.4813687