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Title: Transport properties of Bi 2 (Se 1−x Te x ) 3 thin films grown by molecular beam epitaxy

Authors:
 [1] ;  [1] ;  [1] ;  [1]
  1. Department of Materials Science and Engineering, University of Delaware, 127 The Green Room 201, Newark, Delaware 19716
Publication Date:
Grant/Contract Number:
SC0016380
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Name: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics Journal Volume: 35 Journal Issue: 2; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1420692

Wang, Yong, Ginley, Theresa P., Zhang, Chiyu, and Law, Stephanie. Transport properties of Bi 2 (Se 1−x Te x ) 3 thin films grown by molecular beam epitaxy. United States: N. p., Web. doi:10.1116/1.4976622.
Wang, Yong, Ginley, Theresa P., Zhang, Chiyu, & Law, Stephanie. Transport properties of Bi 2 (Se 1−x Te x ) 3 thin films grown by molecular beam epitaxy. United States. doi:10.1116/1.4976622.
Wang, Yong, Ginley, Theresa P., Zhang, Chiyu, and Law, Stephanie. 2017. "Transport properties of Bi 2 (Se 1−x Te x ) 3 thin films grown by molecular beam epitaxy". United States. doi:10.1116/1.4976622.
@article{osti_1420692,
title = {Transport properties of Bi 2 (Se 1−x Te x ) 3 thin films grown by molecular beam epitaxy},
author = {Wang, Yong and Ginley, Theresa P. and Zhang, Chiyu and Law, Stephanie},
abstractNote = {},
doi = {10.1116/1.4976622},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 2,
volume = 35,
place = {United States},
year = {2017},
month = {3}
}