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Title: Insight into the epitaxial growth of high optical quality GaAs 1–x Bi x

Authors:
 [1] ;  [1] ;  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, Colorado 80401, USA
Publication Date:
Grant/Contract Number:
AC36-O8GO-28308
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 118 Journal Issue: 23; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1420689

Beaton, D. A., Mascarenhas, A., and Alberi, K.. Insight into the epitaxial growth of high optical quality GaAs 1–x Bi x. United States: N. p., Web. doi:10.1063/1.4937574.
Beaton, D. A., Mascarenhas, A., & Alberi, K.. Insight into the epitaxial growth of high optical quality GaAs 1–x Bi x. United States. doi:10.1063/1.4937574.
Beaton, D. A., Mascarenhas, A., and Alberi, K.. 2015. "Insight into the epitaxial growth of high optical quality GaAs 1–x Bi x". United States. doi:10.1063/1.4937574.
@article{osti_1420689,
title = {Insight into the epitaxial growth of high optical quality GaAs 1–x Bi x},
author = {Beaton, D. A. and Mascarenhas, A. and Alberi, K.},
abstractNote = {},
doi = {10.1063/1.4937574},
journal = {Journal of Applied Physics},
number = 23,
volume = 118,
place = {United States},
year = {2015},
month = {12}
}