Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices
Abstract
We report substantial improvement of near-infrared (2–2.6 μm) intersubband absorption in c-plane AlInN/GaN superlattices grown by molecular beam epitaxy. Progress was obtained through optimization of AlInN growth conditions using an AlInN growth rate of 0.9-nm/min at substrate temperature of 550 °C, as well as by judiciously placing the charge into two delta-doping sheets. Structural characterization suggests that AlInN crystal quality is enhanced and interface roughness is reduced. Importantly, near-infrared absorption data indicate that the optical quality of the AlInN/GaN superlattices is now comparable with that of AlN/GaN superlattices designed to exploit near-infrared intersubband transitions.
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1420603
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 12; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Shirazi-HD, M., Turkmeneli, K., Liu, S., Dai, S., Edmunds, C., Shao, J., Gardner, G., Zakharov, D. N., Manfra, M. J., and Malis, O. Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices. United States: N. p., 2016.
Web. doi:10.1063/1.4944847.
Shirazi-HD, M., Turkmeneli, K., Liu, S., Dai, S., Edmunds, C., Shao, J., Gardner, G., Zakharov, D. N., Manfra, M. J., & Malis, O. Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices. United States. https://doi.org/10.1063/1.4944847
Shirazi-HD, M., Turkmeneli, K., Liu, S., Dai, S., Edmunds, C., Shao, J., Gardner, G., Zakharov, D. N., Manfra, M. J., and Malis, O. Thu .
"Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices". United States. https://doi.org/10.1063/1.4944847.
@article{osti_1420603,
title = {Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices},
author = {Shirazi-HD, M. and Turkmeneli, K. and Liu, S. and Dai, S. and Edmunds, C. and Shao, J. and Gardner, G. and Zakharov, D. N. and Manfra, M. J. and Malis, O.},
abstractNote = {We report substantial improvement of near-infrared (2–2.6 μm) intersubband absorption in c-plane AlInN/GaN superlattices grown by molecular beam epitaxy. Progress was obtained through optimization of AlInN growth conditions using an AlInN growth rate of 0.9-nm/min at substrate temperature of 550 °C, as well as by judiciously placing the charge into two delta-doping sheets. Structural characterization suggests that AlInN crystal quality is enhanced and interface roughness is reduced. Importantly, near-infrared absorption data indicate that the optical quality of the AlInN/GaN superlattices is now comparable with that of AlN/GaN superlattices designed to exploit near-infrared intersubband transitions.},
doi = {10.1063/1.4944847},
journal = {Applied Physics Letters},
number = 12,
volume = 108,
place = {United States},
year = {Thu Mar 24 00:00:00 EDT 2016},
month = {Thu Mar 24 00:00:00 EDT 2016}
}
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