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Title: Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2  μ m

Authors:
 [1];  [1];  [1];  [2];  [1];  [3];  [3]; ORCiD logo [1];  [4]
  1. Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany
  2. NAsPIII/V GmbH, Hans-Meerwein-Straße, 35032 Marburg, Germany
  3. Nonlinear Control Strategies, Inc., 7040 N Montecatina Drive, Tucson, Arizona 85704, USA
  4. Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany, NAsPIII/V GmbH, Hans-Meerwein-Straße, 35032 Marburg, Germany
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1420577
Grant/Contract Number:  
FA9550-13-C-0009
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 7; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Möller, C., Fuchs, C., Berger, C., Ruiz Perez, A., Koch, M., Hader, J., Moloney, J. V., Koch, S. W., and Stolz, W. Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2  μ m. United States: N. p., 2016. Web. doi:10.1063/1.4942103.
Möller, C., Fuchs, C., Berger, C., Ruiz Perez, A., Koch, M., Hader, J., Moloney, J. V., Koch, S. W., & Stolz, W. Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2  μ m. United States. doi:10.1063/1.4942103.
Möller, C., Fuchs, C., Berger, C., Ruiz Perez, A., Koch, M., Hader, J., Moloney, J. V., Koch, S. W., and Stolz, W. Mon . "Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2  μ m". United States. doi:10.1063/1.4942103.
@article{osti_1420577,
title = {Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2  μ m},
author = {Möller, C. and Fuchs, C. and Berger, C. and Ruiz Perez, A. and Koch, M. and Hader, J. and Moloney, J. V. and Koch, S. W. and Stolz, W.},
abstractNote = {},
doi = {10.1063/1.4942103},
journal = {Applied Physics Letters},
number = 7,
volume = 108,
place = {United States},
year = {2016},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4942103

Citation Metrics:
Cited by: 13 works
Citation information provided by
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Works referenced in this record:

GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates
journal, January 2000

  • Klem, J. F.; Blum, O.; Kurtz, S. R.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 3
  • DOI: 10.1116/1.591437

Enabling optical communication
journal, May 2010


High power and high brightness from an optically pumped InAs/InGaSb type-II midinfrared laser with low confinement
journal, July 2002

  • Kaspi, R.; Ongstad, A.; Dente, G. C.
  • Applied Physics Letters, Vol. 81, Issue 3
  • DOI: 10.1063/1.1493227

Novel type-II material system for laser applications in the near-infrared regime
journal, April 2015

  • Berger, C.; Möller, C.; Hens, P.
  • AIP Advances, Vol. 5, Issue 4
  • DOI: 10.1063/1.4917180

The Thermal Resistance of High-Power Semiconductor Disk Lasers
journal, May 2015

  • Heinen, Bernd; Moller, Christoph; Jandieri, Kakhaber
  • IEEE Journal of Quantum Electronics, Vol. 51, Issue 5
  • DOI: 10.1109/JQE.2015.2412458

Microscopic analysis of mid-infrared type-II “W” diode lasers
journal, February 2009

  • Hader, J.; Moloney, J. V.; Koch, S. W.
  • Applied Physics Letters, Vol. 94, Issue 6
  • DOI: 10.1063/1.3080216

Extended cavity surface-emitting semiconductor lasers
journal, January 2006


Continuous wave vertical cavity surface emitting lasers at 2.5  μ m with InP-based type-II quantum wells
journal, April 2015

  • Sprengel, S.; Andrejew, A.; Federer, F.
  • Applied Physics Letters, Vol. 106, Issue 15
  • DOI: 10.1063/1.4917282

Design analysis of 1550-nm gaassb-(in)gaasn type-II quantum-well laser active regions
journal, October 2003


Semiconductor disk lasers for the generation of visible and ultraviolet radiation
journal, September 2009


Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells
journal, November 1998

  • Meyer, J. R.; Felix, C. L.; Bewley, W. W.
  • Applied Physics Letters, Vol. 73, Issue 20
  • DOI: 10.1063/1.122609

On the Measurement of the Thermal Resistance of Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
journal, July 2012

  • Heinen, Bernd; Zhang, Fan; Sparenberg, Mino
  • IEEE Journal of Quantum Electronics, Vol. 48, Issue 7
  • DOI: 10.1109/JQE.2012.2196678

Type‐II quantum‐well lasers for the mid‐wavelength infrared
journal, August 1995

  • Meyer, J. R.; Hoffman, C. A.; Bartoli, F. J.
  • Applied Physics Letters, Vol. 67, Issue 6
  • DOI: 10.1063/1.115216

Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures
journal, November 2015

  • Gies, S.; Kruska, C.; Berger, C.
  • Applied Physics Letters, Vol. 107, Issue 18
  • DOI: 10.1063/1.4935212

1180 nm VECSEL with output power beyond 20 W
journal, January 2013


Quantum design of semiconductor active materials: laser and amplifier applications
journal, February 2007

  • Moloney, J. V.; Hader, J.; Koch, S. W.
  • Laser & Photonics Review, Vol. 1, Issue 1
  • DOI: 10.1002/lpor.200610003

Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb ‘W’-Type QW Laser on InP Substrate
journal, February 2015


Wavelength Dependence of Ocular Damage Thresholds in the Near-Ir to Far-Ir Transition Region: Proposed Revisions to mpes
journal, January 2007


Predictive Microscopic Modeling of VECSELs
journal, May 2010


Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells
journal, January 2006

  • Yeh, J. -Y.; Mawst, L. J.; Khandekar, A. A.
  • Applied Physics Letters, Vol. 88, Issue 5
  • DOI: 10.1063/1.2171486

Charge-separation effects in 1.3 μm GaAsSb type-II quantum-well laser gain
journal, June 2001

  • Chow, W. W.; Schneider, H. C.
  • Applied Physics Letters, Vol. 78, Issue 26
  • DOI: 10.1063/1.1379784

Highly strained InGaAs∕GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170nm
journal, September 2007

  • Fan, Li; Hessenius, Chris; Fallahi, Mahmoud
  • Applied Physics Letters, Vol. 91, Issue 13
  • DOI: 10.1063/1.2790838