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Title: Stress engineering of high-quality single crystal diamond by heteroepitaxial lateral overgrowth

Authors:
ORCiD logo [1] ;  [1]
  1. Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824, USA
Publication Date:
Grant/Contract Number:
FG52-08NA28767
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 5; Related Information: CHORUS Timestamp: 2018-02-14 14:25:01; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1420575