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Title: High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
  1. HRL Laboratories, LLC, 3011 Malibu Canyon Road, Malibu, California 90265-4797, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1420572
Grant/Contract Number:  
AR000450
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 6; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Cao, Y., Chu, R., Li, R., Chen, M., Chang, R., and Hughes, B. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth. United States: N. p., 2016. Web. doi:10.1063/1.4941814.
Cao, Y., Chu, R., Li, R., Chen, M., Chang, R., & Hughes, B. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth. United States. doi:10.1063/1.4941814.
Cao, Y., Chu, R., Li, R., Chen, M., Chang, R., and Hughes, B. Mon . "High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth". United States. doi:10.1063/1.4941814.
@article{osti_1420572,
title = {High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth},
author = {Cao, Y. and Chu, R. and Li, R. and Chen, M. and Chang, R. and Hughes, B.},
abstractNote = {},
doi = {10.1063/1.4941814},
journal = {Applied Physics Letters},
number = 6,
volume = 108,
place = {United States},
year = {2016},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4941814

Citation Metrics:
Cited by: 31 works
Citation information provided by
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