High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Cao, Y.; Chu, R.; Li, R.; Chen, M.; Chang, R.; Hughes, B.

doi:10.1063/1.4941814

Title: High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Abstract

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm−3 and 3 × 1019 cm−3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

Authors:

; Chu, R.; Li, R.; Chen, M.; Chang, R.; Hughes, B.

Publication Date:: Tue Feb 09 00:00:00 EST 2016

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1420572

Grant/Contract Number:: AR000450

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 6; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Cao, Y., Chu, R., Li, R., Chen, M., Chang, R., and Hughes, B. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4941814.

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                    Cao, Y., Chu, R., Li, R., Chen, M., Chang, R., & Hughes, B. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth.  United States.  https://doi.org/10.1063/1.4941814

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                    Cao, Y., Chu, R., Li, R., Chen, M., Chang, R., and Hughes, B. Tue .  
"High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth".  United States.  https://doi.org/10.1063/1.4941814.

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@article{osti_1420572,

  title        = {High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth},

  author       = {Cao, Y. and Chu, R. and Li, R. and Chen, M. and Chang, R. and Hughes, B.},

  abstractNote = {Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm−3 and 3 × 1019 cm−3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.},

  doi          = {10.1063/1.4941814},

  journal      = {Applied Physics Letters},

  number       = 6,

  volume       = 108,

  place        = {United States},

  year         = {Tue Feb 09 00:00:00 EST 2016},

  month        = {Tue Feb 09 00:00:00 EST 2016}

}

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Title: High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Abstract

Citation Formats

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Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates journal, July 2010

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Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors journal, June 2014

High Breakdown Voltage Undoped AlGaN–GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC–DC Converter Application journal, November 2004

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN journal, January 2014

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction journal, May 2015

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance journal, May 2011

7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates journal, January 2000

3.7 kV Vertical GaN PN Diodes journal, February 2014

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown journal, December 2015

Role of carbon in GaN journal, December 2002

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers journal, June 2005

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz journal, June 2014

Large area GaN and AlN template substrates fabricated by HVPE journal, January 2009

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High voltage 4H-SiC Schottky barrier diodes journal, June 1995

Evolution of deep centers in GaN grown by hydride vapor phase epitaxy journal, January 2001

Characterization of bulk GaN crystals grown from solution at near atmospheric pressure journal, September 2010

Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy journal, August 2009

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties journal, May 2014

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
journal, July 2013

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
journal, July 2010

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates
journal, September 2014

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors
journal, June 2014

High Breakdown Voltage Undoped AlGaN–GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC–DC Converter Application
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Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
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Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
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1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
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7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates
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Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
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