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Title: High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Authors:
ORCiD logo [1] ;  [2] ;  [2] ;  [2] ; ORCiD logo [1] ;  [2] ;  [2] ; ORCiD logo [1] ;  [1] ;  [1] ; ORCiD logo [3] ;  [1] ;  [2] ;  [2]
  1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
  2. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA, Departments of ECE and MSE, Cornell University, Ithaca, New York 14853, USA
  3. Departments of ECE and MSE, Cornell University, Ithaca, New York 14853, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 107 Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1420571