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Title: High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Authors:
ORCiD logo [1];  [2];  [2];  [2]; ORCiD logo [1];  [2];  [2]; ORCiD logo [1];  [1];  [1]; ORCiD logo [3];  [1];  [2];  [2]
  1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
  2. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA, Departments of ECE and MSE, Cornell University, Ithaca, New York 14853, USA
  3. Departments of ECE and MSE, Cornell University, Ithaca, New York 14853, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1420571
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 107 Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Qi, Meng, Nomoto, Kazuki, Zhu, Mingda, Hu, Zongyang, Zhao, Yuning, Protasenko, Vladimir, Song, Bo, Yan, Xiaodong, Li, Guowang, Verma, Jai, Bader, Samuel, Fay, Patrick, Xing, Huili Grace, and Jena, Debdeep. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4936891.
Qi, Meng, Nomoto, Kazuki, Zhu, Mingda, Hu, Zongyang, Zhao, Yuning, Protasenko, Vladimir, Song, Bo, Yan, Xiaodong, Li, Guowang, Verma, Jai, Bader, Samuel, Fay, Patrick, Xing, Huili Grace, & Jena, Debdeep. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy. United States. doi:10.1063/1.4936891.
Qi, Meng, Nomoto, Kazuki, Zhu, Mingda, Hu, Zongyang, Zhao, Yuning, Protasenko, Vladimir, Song, Bo, Yan, Xiaodong, Li, Guowang, Verma, Jai, Bader, Samuel, Fay, Patrick, Xing, Huili Grace, and Jena, Debdeep. Mon . "High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy". United States. doi:10.1063/1.4936891.
@article{osti_1420571,
title = {High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy},
author = {Qi, Meng and Nomoto, Kazuki and Zhu, Mingda and Hu, Zongyang and Zhao, Yuning and Protasenko, Vladimir and Song, Bo and Yan, Xiaodong and Li, Guowang and Verma, Jai and Bader, Samuel and Fay, Patrick and Xing, Huili Grace and Jena, Debdeep},
abstractNote = {},
doi = {10.1063/1.4936891},
journal = {Applied Physics Letters},
number = 23,
volume = 107,
place = {United States},
year = {2015},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4936891

Citation Metrics:
Cited by: 17 works
Citation information provided by
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