High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Qi, Meng; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Zhao, Yuning; Protasenko, Vladimir; Song, Bo; Yan, Xiaodong; Li, Guowang; Verma, Jai; Bader, Samuel; Fay, Patrick; Xing, Huili Grace; Jena, Debdeep

doi:10.1063/1.4936891

Title: High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Abstract

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

Authors:

; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang;

; Protasenko, Vladimir; Song, Bo;

; Li, Guowang; Verma, Jai;

; Fay, Patrick; Xing, Huili Grace; Jena, Debdeep

Publication Date:: Tue Dec 08 00:00:00 EST 2015

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1420571

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 107 Journal Issue: 23; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Qi, Meng, Nomoto, Kazuki, Zhu, Mingda, Hu, Zongyang, Zhao, Yuning, Protasenko, Vladimir, Song, Bo, Yan, Xiaodong, Li, Guowang, Verma, Jai, Bader, Samuel, Fay, Patrick, Xing, Huili Grace, and Jena, Debdeep. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4936891.

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                    Qi, Meng, Nomoto, Kazuki, Zhu, Mingda, Hu, Zongyang, Zhao, Yuning, Protasenko, Vladimir, Song, Bo, Yan, Xiaodong, Li, Guowang, Verma, Jai, Bader, Samuel, Fay, Patrick, Xing, Huili Grace, & Jena, Debdeep. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy.  United States.  https://doi.org/10.1063/1.4936891

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                    Qi, Meng, Nomoto, Kazuki, Zhu, Mingda, Hu, Zongyang, Zhao, Yuning, Protasenko, Vladimir, Song, Bo, Yan, Xiaodong, Li, Guowang, Verma, Jai, Bader, Samuel, Fay, Patrick, Xing, Huili Grace, and Jena, Debdeep. Tue .  
"High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy".  United States.  https://doi.org/10.1063/1.4936891.

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@article{osti_1420571,

  title        = {High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy},

  author       = {Qi, Meng and Nomoto, Kazuki and Zhu, Mingda and Hu, Zongyang and Zhao, Yuning and Protasenko, Vladimir and Song, Bo and Yan, Xiaodong and Li, Guowang and Verma, Jai and Bader, Samuel and Fay, Patrick and Xing, Huili Grace and Jena, Debdeep},

  abstractNote = {Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.},

  doi          = {10.1063/1.4936891},

  journal      = {Applied Physics Letters},

  number       = 23,

  volume       = 107,

  place        = {United States},

  year         = {Tue Dec 08 00:00:00 EST 2015},

  month        = {Tue Dec 08 00:00:00 EST 2015}

}

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Title: High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Abstract

Citation Formats

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon journal, April 2015

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents journal, November 2010

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier journal, November 2011

High Voltage Vertical GaN p-n Diodes With Avalanche Capability journal, October 2013

Direct electrical observation of plasma wave - related effects in GaN-based two-dimensional electron gases journal, October 2014

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance journal, May 2011

Low-Voltage Tunnel Transistors for Beyond CMOS Logic journal, December 2010

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates journal, December 2011

Electric breakdown in GaN p‐n junctions journal, January 1996

Power electronics on InAlN/(In)GaN: Prospect for a record performance journal, November 2001

Planar Nearly Ideal Edge-Termination Technique for GaN Devices journal, March 2011

Tunneling Transistors Based on Graphene and 2-D Crystals journal, June 2013

Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction journal, March 1998

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GaN-Based RF Power Devices and Amplifiers journal, February 2008

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GaN-on-Si Vertical Schottky and p-n Diodes journal, June 2014

Yellow luminescence and related deep levels in unintentionally doped GaN films journal, April 1999

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p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
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High Voltage Vertical GaN p-n Diodes With Avalanche Capability
journal, October 2013

Direct electrical observation of plasma wave - related effects in GaN-based two-dimensional electron gases
journal, October 2014

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
journal, May 2011

Low-Voltage Tunnel Transistors for Beyond CMOS Logic
journal, December 2010

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates
journal, December 2011

Electric breakdown in GaN p‐n junctions
journal, January 1996

Power electronics on InAlN/(In)GaN: Prospect for a record performance
journal, November 2001

Planar Nearly Ideal Edge-Termination Technique for GaN Devices
journal, March 2011

Tunneling Transistors Based on Graphene and 2-D Crystals
journal, June 2013

Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction
journal, March 1998

Electrical characterization of GaN p-n junctions with and without threading dislocations
journal, August 1998

Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h
journal, January 2014

GaN-Based RF Power Devices and Amplifiers
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InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
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