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Title: A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

Authors:
 [1] ;  [1] ; ORCiD logo [1] ;  [1] ;  [1] ;  [1]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907, USA
Publication Date:
Grant/Contract Number:
AR0000299
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 117 Journal Issue: 24; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1420549

Haidet, Brian B., Bryan, Isaac, Reddy, Pramod, Bryan, Zachary, Collazo, Ramón, and Sitar, Zlatko. A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN. United States: N. p., Web. doi:10.1063/1.4923062.
Haidet, Brian B., Bryan, Isaac, Reddy, Pramod, Bryan, Zachary, Collazo, Ramón, & Sitar, Zlatko. A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN. United States. doi:10.1063/1.4923062.
Haidet, Brian B., Bryan, Isaac, Reddy, Pramod, Bryan, Zachary, Collazo, Ramón, and Sitar, Zlatko. 2015. "A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN". United States. doi:10.1063/1.4923062.
@article{osti_1420549,
title = {A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN},
author = {Haidet, Brian B. and Bryan, Isaac and Reddy, Pramod and Bryan, Zachary and Collazo, Ramón and Sitar, Zlatko},
abstractNote = {},
doi = {10.1063/1.4923062},
journal = {Journal of Applied Physics},
number = 24,
volume = 117,
place = {United States},
year = {2015},
month = {6}
}