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Title: High-efficiency AlGaInP solar cells grown by molecular beam epitaxy

Authors:
 [1] ;  [1] ; ORCiD logo [1] ;  [2] ; ORCiD logo [1] ;  [3]
  1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA
  2. Área de Tecnología Electrónica, Universidad Rey Juan Carlos, 28933 Móstoles, Madrid, Spain
  3. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Publication Date:
Grant/Contract Number:
AR0000508
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 109 Journal Issue: 17; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1420539

Faucher, J., Sun, Y., Jung, D., Martin, D., Masuda, T., and Lee, M. L.. High-efficiency AlGaInP solar cells grown by molecular beam epitaxy. United States: N. p., Web. doi:10.1063/1.4965979.
Faucher, J., Sun, Y., Jung, D., Martin, D., Masuda, T., & Lee, M. L.. High-efficiency AlGaInP solar cells grown by molecular beam epitaxy. United States. doi:10.1063/1.4965979.
Faucher, J., Sun, Y., Jung, D., Martin, D., Masuda, T., and Lee, M. L.. 2016. "High-efficiency AlGaInP solar cells grown by molecular beam epitaxy". United States. doi:10.1063/1.4965979.
@article{osti_1420539,
title = {High-efficiency AlGaInP solar cells grown by molecular beam epitaxy},
author = {Faucher, J. and Sun, Y. and Jung, D. and Martin, D. and Masuda, T. and Lee, M. L.},
abstractNote = {},
doi = {10.1063/1.4965979},
journal = {Applied Physics Letters},
number = 17,
volume = 109,
place = {United States},
year = {2016},
month = {10}
}