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Title: Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier

Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. HRL Laboratories, LLC, 3011 Malibu Canyon Road, Malibu, California 90265-4797, USA
Publication Date:
Grant/Contract Number:
AR000450
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 11; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1420517

Cao, Y., Chu, R., Li, R., Chen, M., and Williams, A. J.. Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier. United States: N. p., Web. doi:10.1063/1.4943946.
Cao, Y., Chu, R., Li, R., Chen, M., & Williams, A. J.. Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier. United States. doi:10.1063/1.4943946.
Cao, Y., Chu, R., Li, R., Chen, M., and Williams, A. J.. 2016. "Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier". United States. doi:10.1063/1.4943946.
@article{osti_1420517,
title = {Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier},
author = {Cao, Y. and Chu, R. and Li, R. and Chen, M. and Williams, A. J.},
abstractNote = {},
doi = {10.1063/1.4943946},
journal = {Applied Physics Letters},
number = 11,
volume = 108,
place = {United States},
year = {2016},
month = {3}
}