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Title: Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9  μ m/h by plasma-assisted molecular beam epitaxy

Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [2]
  1. Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  2. Veeco Instruments, St. Paul, Minnesota 55127, USA
Publication Date:
Grant/Contract Number:
AR0000470
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 15; Related Information: CHORUS Timestamp: 2018-02-14 11:56:21; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1420510