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Title: Molecular beam epitaxy growth of SnO2 using a tin chemical precursor

Authors:
 [1];  [1];  [2];  [2];  [1]
  1. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
  2. Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1420480
Grant/Contract Number:  
EE0005319
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Additional Journal Information:
Journal Name: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Journal Volume: 33 Journal Issue: 2; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English

Citation Formats

Wang, Tianqi, Prakash, Abhinav, Warner, Ellis, Gladfelter, Wayne L., and Jalan, Bharat. Molecular beam epitaxy growth of SnO2 using a tin chemical precursor. United States: N. p., 2015. Web. doi:10.1116/1.4913294.
Wang, Tianqi, Prakash, Abhinav, Warner, Ellis, Gladfelter, Wayne L., & Jalan, Bharat. Molecular beam epitaxy growth of SnO2 using a tin chemical precursor. United States. doi:10.1116/1.4913294.
Wang, Tianqi, Prakash, Abhinav, Warner, Ellis, Gladfelter, Wayne L., and Jalan, Bharat. Mon . "Molecular beam epitaxy growth of SnO2 using a tin chemical precursor". United States. doi:10.1116/1.4913294.
@article{osti_1420480,
title = {Molecular beam epitaxy growth of SnO2 using a tin chemical precursor},
author = {Wang, Tianqi and Prakash, Abhinav and Warner, Ellis and Gladfelter, Wayne L. and Jalan, Bharat},
abstractNote = {},
doi = {10.1116/1.4913294},
journal = {Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films},
number = 2,
volume = 33,
place = {United States},
year = {2015},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1116/1.4913294

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

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