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Title: I 2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

Authors:
 [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [1]
  1. Department of Materials Science and Engineering, Drexel University, 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, USA
  2. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USA
  3. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA
Publication Date:
Grant/Contract Number:
DEAC02-06CH11357
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 13; Related Information: CHORUS Timestamp: 2018-02-14 09:57:14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1420467