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Title: Nuclear quantum effect with pure anharmonicity and the anomalous thermal expansion of silicon

Authors:
ORCiD logo ; ; ; ; ORCiD logo ; ; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-03ER46055; AC02-05CH11231
Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 115 Journal Issue: 9; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1420356

Kim, D. S., Hellman, O., Herriman, J., Smith, H. L., Lin, J. Y. Y., Shulumba, N., Niedziela, J. L., Li, C. W., Abernathy, D. L., and Fultz, B.. Nuclear quantum effect with pure anharmonicity and the anomalous thermal expansion of silicon. United States: N. p., Web. doi:10.1073/pnas.1707745115.
Kim, D. S., Hellman, O., Herriman, J., Smith, H. L., Lin, J. Y. Y., Shulumba, N., Niedziela, J. L., Li, C. W., Abernathy, D. L., & Fultz, B.. Nuclear quantum effect with pure anharmonicity and the anomalous thermal expansion of silicon. United States. doi:10.1073/pnas.1707745115.
Kim, D. S., Hellman, O., Herriman, J., Smith, H. L., Lin, J. Y. Y., Shulumba, N., Niedziela, J. L., Li, C. W., Abernathy, D. L., and Fultz, B.. 2018. "Nuclear quantum effect with pure anharmonicity and the anomalous thermal expansion of silicon". United States. doi:10.1073/pnas.1707745115.
@article{osti_1420356,
title = {Nuclear quantum effect with pure anharmonicity and the anomalous thermal expansion of silicon},
author = {Kim, D. S. and Hellman, O. and Herriman, J. and Smith, H. L. and Lin, J. Y. Y. and Shulumba, N. and Niedziela, J. L. and Li, C. W. and Abernathy, D. L. and Fultz, B.},
abstractNote = {},
doi = {10.1073/pnas.1707745115},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 9,
volume = 115,
place = {United States},
year = {2018},
month = {2}
}

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Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K
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