Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Journal Article · 12 February 2018 · Advanced Materials

DOI: https://doi.org/10.1002/adma.201705193 · OSTI ID:1420338

Zhao, Xiaolong ^[1]; Ma, Jun ^[2]; Xiao, Xiangheng ^[3]; Liu, Qi ^[4]; Shao, Lin ^[5]; Chen, Di ^[6]; Liu, Sen ^[7]; Niu, Jiebin ^[4]; Zhang, Xumeng ^[8]; Wang, Yan ^[7]; Cao, Rongrong ^[8]; Wang, Wei ^[7]; Di, Zengfeng ^[9]; Lv, Hangbing ^[4]; Long, Shibing ^[4]; Liu, Ming ^[4]

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1. Key Laboratory of Microelectronic Devices &, Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China, Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam Application Wuhan University Wuhan 430072 China
2. State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China, School of Electronic, Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 China
3. Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam Application Wuhan University Wuhan 430072 China
4. Key Laboratory of Microelectronic Devices &, Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China, School of Electronic, Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 China, Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China
5. Department of Nuclear Engineering Texas A&,M University College Station TX 77843 USA
6. Materials Science and Technology Division Los Alamos National Laboratory Los Alamos NM 87545 USA
7. Key Laboratory of Microelectronic Devices &, Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China
8. Key Laboratory of Microelectronic Devices &, Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China, School of Electronic, Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 China
9. State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

Abstract Cation‐based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current‐retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentralizing the CF distribution, this current‐retention dilemma of cation‐based RS devices is broken for the first time. Utilizing the graphene impermeability, the cation injecting path to the RS layer can be well modulated by structure‐defective graphene, leading to control of the CF quantity and size. By graphene defect engineering, a low operating current (≈1 µA) memory and a high driving current (≈1 mA) selector are successfully realized in the same material system. Based on systematically materials analysis, the diameter of CF, modulated by graphene defect size, is the major factor for CF stability. Breakthrough in addressing the current‐retention dilemma will instruct the future implementation of high‐density 3D integration of RS memory immune to crosstalk issues.

• Sponsoring Organization: USDOE
• Grant/Contract Number: SC0006725
• OSTI ID: 1420338
• Journal Information: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 14 Vol. 30; ISSN 0935-9648
• Publisher: Wiley Blackwell (John Wiley & Sons)Copyright Statement
• Country of Publication: Germany
• Language: English