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This content will become publicly available on February 13, 2019

Title: Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [6] ;  [7] ;  [4] ;  [8] ;  [7] ;  [8] ;  [7] ;  [9] ;  [4] ;  [4] ;  [4]
  1. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China, Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam Application, Wuhan University, Wuhan 430072 China
  2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 China, School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 China
  3. Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam Application, Wuhan University, Wuhan 430072 China
  4. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China, School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 China, Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009 China
  5. Department of Nuclear Engineering, Texas A&M University, College Station TX 77843 USA
  6. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos NM 87545 USA
  7. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China
  8. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China, School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 China
  9. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 China
Publication Date:
Grant/Contract Number:
SC0006725
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials Journal Volume: 30 Journal Issue: 14; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1420338

Zhao, Xiaolong, Ma, Jun, Xiao, Xiangheng, Liu, Qi, Shao, Lin, Chen, Di, Liu, Sen, Niu, Jiebin, Zhang, Xumeng, Wang, Yan, Cao, Rongrong, Wang, Wei, Di, Zengfeng, Lv, Hangbing, Long, Shibing, and Liu, Ming. Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects. Germany: N. p., Web. doi:10.1002/adma.201705193.
Zhao, Xiaolong, Ma, Jun, Xiao, Xiangheng, Liu, Qi, Shao, Lin, Chen, Di, Liu, Sen, Niu, Jiebin, Zhang, Xumeng, Wang, Yan, Cao, Rongrong, Wang, Wei, Di, Zengfeng, Lv, Hangbing, Long, Shibing, & Liu, Ming. Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects. Germany. doi:10.1002/adma.201705193.
Zhao, Xiaolong, Ma, Jun, Xiao, Xiangheng, Liu, Qi, Shao, Lin, Chen, Di, Liu, Sen, Niu, Jiebin, Zhang, Xumeng, Wang, Yan, Cao, Rongrong, Wang, Wei, Di, Zengfeng, Lv, Hangbing, Long, Shibing, and Liu, Ming. 2018. "Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects". Germany. doi:10.1002/adma.201705193.
@article{osti_1420338,
title = {Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects},
author = {Zhao, Xiaolong and Ma, Jun and Xiao, Xiangheng and Liu, Qi and Shao, Lin and Chen, Di and Liu, Sen and Niu, Jiebin and Zhang, Xumeng and Wang, Yan and Cao, Rongrong and Wang, Wei and Di, Zengfeng and Lv, Hangbing and Long, Shibing and Liu, Ming},
abstractNote = {},
doi = {10.1002/adma.201705193},
journal = {Advanced Materials},
number = 14,
volume = 30,
place = {Germany},
year = {2018},
month = {2}
}

Works referenced in this record:

Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies
journal, July 2011
  • Cançado, L. G.; Jorio, A.; Ferreira, E. H. Martins
  • Nano Letters, Vol. 11, Issue 8, p. 3190-3196
  • DOI: 10.1021/nl201432g

Metal–Oxide RRAM
journal, June 2012
  • Wong, H.-S. Philip; Lee, Heng-Yuan; Yu, Shimeng
  • Proceedings of the IEEE, Vol. 100, Issue 6, p. 1951-1970
  • DOI: 10.1109/JPROC.2012.2190369

Memristive devices for computing
journal, January 2013
  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240