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Title: Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Authors:
 [1];  [2];  [3];  [4];  [5];  [6];  [7];  [4];  [8];  [7];  [8];  [7];  [9];  [4];  [4];  [4]
  1. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China, Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam Application, Wuhan University, Wuhan 430072 China
  2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 China, School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 China
  3. Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam Application, Wuhan University, Wuhan 430072 China
  4. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China, School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 China, Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009 China
  5. Department of Nuclear Engineering, Texas A&M University, College Station TX 77843 USA
  6. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos NM 87545 USA
  7. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China
  8. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China, School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 China
  9. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1420338
Grant/Contract Number:  
SC0006725
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials Journal Volume: 30 Journal Issue: 14; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Zhao, Xiaolong, Ma, Jun, Xiao, Xiangheng, Liu, Qi, Shao, Lin, Chen, Di, Liu, Sen, Niu, Jiebin, Zhang, Xumeng, Wang, Yan, Cao, Rongrong, Wang, Wei, Di, Zengfeng, Lv, Hangbing, Long, Shibing, and Liu, Ming. Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects. Germany: N. p., 2018. Web. doi:10.1002/adma.201705193.
Zhao, Xiaolong, Ma, Jun, Xiao, Xiangheng, Liu, Qi, Shao, Lin, Chen, Di, Liu, Sen, Niu, Jiebin, Zhang, Xumeng, Wang, Yan, Cao, Rongrong, Wang, Wei, Di, Zengfeng, Lv, Hangbing, Long, Shibing, & Liu, Ming. Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects. Germany. doi:10.1002/adma.201705193.
Zhao, Xiaolong, Ma, Jun, Xiao, Xiangheng, Liu, Qi, Shao, Lin, Chen, Di, Liu, Sen, Niu, Jiebin, Zhang, Xumeng, Wang, Yan, Cao, Rongrong, Wang, Wei, Di, Zengfeng, Lv, Hangbing, Long, Shibing, and Liu, Ming. Tue . "Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects". Germany. doi:10.1002/adma.201705193.
@article{osti_1420338,
title = {Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects},
author = {Zhao, Xiaolong and Ma, Jun and Xiao, Xiangheng and Liu, Qi and Shao, Lin and Chen, Di and Liu, Sen and Niu, Jiebin and Zhang, Xumeng and Wang, Yan and Cao, Rongrong and Wang, Wei and Di, Zengfeng and Lv, Hangbing and Long, Shibing and Liu, Ming},
abstractNote = {},
doi = {10.1002/adma.201705193},
journal = {Advanced Materials},
number = 14,
volume = 30,
place = {Germany},
year = {2018},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/adma.201705193

Citation Metrics:
Cited by: 15 works
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