Size-tunable Lateral Confinement in Monolayer Semiconductors
Abstract
Three-dimensional confinement allows semiconductor quantum dots to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties in monolayer transition metal dichalcogenides provide further degrees of freedom requisite for information processing and spintronics. In nanostructures, however, spatial confinement can cause hybridization that inhibits the robustness of these emergent properties. Here in this paper, we show that laterally-confined excitons in monolayer MoS2 nanodots can be created through top-down nanopatterning with controlled size tunability. Unlike chemically-exfoliated monolayer nanoparticles, the lithographically patterned monolayer semiconductor nanodots down to a radius of 15 nm exhibit the same valley polarization as in a continuous monolayer sheet. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS2 nanostructures using semiconductor-compatible processing suggest that monolayer semiconductor nanodots have potential to be multimodal building blocks of integrated optoelectronics and spintronics systems
- Authors:
-
[4]
- Northwestern Univ., Evanston, IL (United States). Applied Physics Program
- Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
- Northwestern Univ., Evanston, IL (United States). Dept. of Physics and Astronomy
- Northwestern Univ., Evanston, IL (United States). Applied Physics Program; Northwestern Univ., Evanston, IL (United States). Dept. of Physics and Astronomy
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1420072
- Grant/Contract Number:
- AC02-06CH11357; SC0012130
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; Electronic properties and materials; Nanoparticles; Quantum dots; Two-dimensional materials
Citation Formats
Wei, Guohua, Czaplewski, David A., Lenferink, Erik J., Stanev, Teodor K., Jung, Il Woong, and Stern, Nathaniel P. Size-tunable Lateral Confinement in Monolayer Semiconductors. United States: N. p., 2017.
Web. doi:10.1038/s41598-017-03594-z.
Wei, Guohua, Czaplewski, David A., Lenferink, Erik J., Stanev, Teodor K., Jung, Il Woong, & Stern, Nathaniel P. Size-tunable Lateral Confinement in Monolayer Semiconductors. United States. https://doi.org/10.1038/s41598-017-03594-z
Wei, Guohua, Czaplewski, David A., Lenferink, Erik J., Stanev, Teodor K., Jung, Il Woong, and Stern, Nathaniel P. Mon .
"Size-tunable Lateral Confinement in Monolayer Semiconductors". United States. https://doi.org/10.1038/s41598-017-03594-z. https://www.osti.gov/servlets/purl/1420072.
@article{osti_1420072,
title = {Size-tunable Lateral Confinement in Monolayer Semiconductors},
author = {Wei, Guohua and Czaplewski, David A. and Lenferink, Erik J. and Stanev, Teodor K. and Jung, Il Woong and Stern, Nathaniel P.},
abstractNote = {Three-dimensional confinement allows semiconductor quantum dots to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties in monolayer transition metal dichalcogenides provide further degrees of freedom requisite for information processing and spintronics. In nanostructures, however, spatial confinement can cause hybridization that inhibits the robustness of these emergent properties. Here in this paper, we show that laterally-confined excitons in monolayer MoS2 nanodots can be created through top-down nanopatterning with controlled size tunability. Unlike chemically-exfoliated monolayer nanoparticles, the lithographically patterned monolayer semiconductor nanodots down to a radius of 15 nm exhibit the same valley polarization as in a continuous monolayer sheet. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS2 nanostructures using semiconductor-compatible processing suggest that monolayer semiconductor nanodots have potential to be multimodal building blocks of integrated optoelectronics and spintronics systems},
doi = {10.1038/s41598-017-03594-z},
journal = {Scientific Reports},
number = 1,
volume = 7,
place = {United States},
year = {Mon Jun 12 00:00:00 EDT 2017},
month = {Mon Jun 12 00:00:00 EDT 2017}
}
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