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Title: Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions

Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [1]
  1. Indian Inst. of Technology (IIT), Delhi (India). Dept. of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Univ. of Gothenburg (Sweden). Dept. of Physics; KTH Royal Inst. of Technology, Stockholm (Sweden). Materials and NanoPhysics, School of Engineering Sciences
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 2; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); India Department of Science and Technology; Swedish Foundation for Strategic Research (SSF)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Spintronics; Magnetic tunnel junctions; Ferromagnetic resonance; Magnetic ordering; Electrical properties
OSTI Identifier:
1419948
Alternate Identifier(s):
OSTI ID: 1416222

Tiwari, Dhananjay, Sharma, Raghav, Heinonen, O. G., Akerman, J., and Muduli, P. K.. Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions. United States: N. p., Web. doi:10.1063/1.5005893.
Tiwari, Dhananjay, Sharma, Raghav, Heinonen, O. G., Akerman, J., & Muduli, P. K.. Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions. United States. doi:10.1063/1.5005893.
Tiwari, Dhananjay, Sharma, Raghav, Heinonen, O. G., Akerman, J., and Muduli, P. K.. 2018. "Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions". United States. doi:10.1063/1.5005893.
@article{osti_1419948,
title = {Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions},
author = {Tiwari, Dhananjay and Sharma, Raghav and Heinonen, O. G. and Akerman, J. and Muduli, P. K.},
abstractNote = {Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.},
doi = {10.1063/1.5005893},
journal = {Applied Physics Letters},
number = 2,
volume = 112,
place = {United States},
year = {2018},
month = {1}
}