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Title: Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions

Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.
 [1] ;  [1] ;  [2] ;  [3] ;  [1]
  1. Indian Inst. of Technology (IIT), Delhi (India). Dept. of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Univ. of Gothenburg (Sweden). Dept. of Physics; KTH Royal Inst. of Technology, Stockholm (Sweden). Materials and NanoPhysics, School of Engineering Sciences
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 2; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); India Department of Science and Technology; Swedish Foundation for Strategic Research (SSF)
Country of Publication:
United States
42 ENGINEERING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Spintronics; Magnetic tunnel junctions; Ferromagnetic resonance; Magnetic ordering; Electrical properties
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1416222