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Title: Observation of ultralong valley lifetime in WSe 2/MoS 2 heterostructures

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe 2/MoS 2 heterostructures by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe 2 layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.
Authors:
ORCiD logo [1] ;  [2] ; ORCiD logo [3] ;  [3] ;  [2] ; ORCiD logo [2] ; ORCiD logo [2] ; ORCiD logo [4] ;  [4] ;  [3] ;  [5] ; ORCiD logo [5]
  1. Univ. of California, Berkeley, CA (United States); Pohang Univ. of Science and Technology, Pohang (Korea)
  2. Univ. of California, Berkeley, CA (United States)
  3. Arizona State Univ., Tempe, AZ (United States)
  4. National Institute for Materials Science, Tsukuba (Japan)
  5. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Science Advances
Additional Journal Information:
Journal Volume: 3; Journal Issue: 7; Journal ID: ISSN 2375-2548
Publisher:
AAAS
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1419435

Kim, Jonghwan, Jin, Chenhao, Chen, Bin, Cai, Hui, Zhao, Tao, Lee, Puiyee, Kahn, Salman, Watanabe, Kenji, Taniguchi, Takashi, Tongay, Sefaattin, Crommie, Michael F., and Wang, Feng. Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures. United States: N. p., Web. doi:10.1126/sciadv.1700518.
Kim, Jonghwan, Jin, Chenhao, Chen, Bin, Cai, Hui, Zhao, Tao, Lee, Puiyee, Kahn, Salman, Watanabe, Kenji, Taniguchi, Takashi, Tongay, Sefaattin, Crommie, Michael F., & Wang, Feng. Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures. United States. doi:10.1126/sciadv.1700518.
Kim, Jonghwan, Jin, Chenhao, Chen, Bin, Cai, Hui, Zhao, Tao, Lee, Puiyee, Kahn, Salman, Watanabe, Kenji, Taniguchi, Takashi, Tongay, Sefaattin, Crommie, Michael F., and Wang, Feng. 2017. "Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures". United States. doi:10.1126/sciadv.1700518. https://www.osti.gov/servlets/purl/1419435.
@article{osti_1419435,
title = {Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures},
author = {Kim, Jonghwan and Jin, Chenhao and Chen, Bin and Cai, Hui and Zhao, Tao and Lee, Puiyee and Kahn, Salman and Watanabe, Kenji and Taniguchi, Takashi and Tongay, Sefaattin and Crommie, Michael F. and Wang, Feng},
abstractNote = {The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe2/MoS2 heterostructures by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe2 layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.},
doi = {10.1126/sciadv.1700518},
journal = {Science Advances},
number = 7,
volume = 3,
place = {United States},
year = {2017},
month = {7}
}

Works referenced in this record:

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  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010