Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures

Kim, Jonghwan; Jin, Chenhao; Chen, Bin; Cai, Hui; Zhao, Tao; Lee, Puiyee; Kahn, Salman; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Crommie, Michael F.; Wang, Feng

doi:10.1126/sciadv.1700518

Title: Observation of ultralong valley lifetime in WSe₂/MoS₂ heterostructures

Abstract

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe₂/MoS₂ heterostructures by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe₂ layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.

Authors:

^[1]; Jin, Chenhao ^[2];

^[3]; Cai, Hui ^[3]; Zhao, Tao ^[2];

^[2];

^[4]; Taniguchi, Takashi ^[4]; Tongay, Sefaattin ^[3]; Crommie, Michael F. ^[5];

^[5]

Univ. of California, Berkeley, CA (United States); Pohang Univ. of Science and Technology, Pohang (Korea)
Univ. of California, Berkeley, CA (United States)
Arizona State Univ., Tempe, AZ (United States)
National Institute for Materials Science, Tsukuba (Japan)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Publication Date:: Wed Jul 26 00:00:00 EDT 2017

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1419435

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Science Advances

Additional Journal Information:: Journal Volume: 3; Journal Issue: 7; Journal ID: ISSN 2375-2548

Publisher:: AAAS

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Kim, Jonghwan, Jin, Chenhao, Chen, Bin, Cai, Hui, Zhao, Tao, Lee, Puiyee, Kahn, Salman, Watanabe, Kenji, Taniguchi, Takashi, Tongay, Sefaattin, Crommie, Michael F., and Wang, Feng. Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures.  United States: N. p., 2017. 
Web.  doi:10.1126/sciadv.1700518.

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                    Kim, Jonghwan, Jin, Chenhao, Chen, Bin, Cai, Hui, Zhao, Tao, Lee, Puiyee, Kahn, Salman, Watanabe, Kenji, Taniguchi, Takashi, Tongay, Sefaattin, Crommie, Michael F., & Wang, Feng. Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures.  United States.  https://doi.org/10.1126/sciadv.1700518

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                    Kim, Jonghwan, Jin, Chenhao, Chen, Bin, Cai, Hui, Zhao, Tao, Lee, Puiyee, Kahn, Salman, Watanabe, Kenji, Taniguchi, Takashi, Tongay, Sefaattin, Crommie, Michael F., and Wang, Feng. Wed .  
"Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures".  United States.  https://doi.org/10.1126/sciadv.1700518.  https://www.osti.gov/servlets/purl/1419435.

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@article{osti_1419435,

  title        = {Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures},

  author       = {Kim, Jonghwan and Jin, Chenhao and Chen, Bin and Cai, Hui and Zhao, Tao and Lee, Puiyee and Kahn, Salman and Watanabe, Kenji and Taniguchi, Takashi and Tongay, Sefaattin and Crommie, Michael F. and Wang, Feng},

  abstractNote = {The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe2/MoS2 heterostructures by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe2 layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.},

  doi          = {10.1126/sciadv.1700518},

  journal      = {Science Advances},

  number       = 7,

  volume       = 3,

  place        = {United States},

  year         = {Wed Jul 26 00:00:00 EDT 2017},

  month        = {Wed Jul 26 00:00:00 EDT 2017}

}

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Journal Article Li, Zhipeng ; Wang, Tianmeng ; Lu, Zhengguang ; ... - Nano Letters

Spin-forbidden intravalley dark excitons in tungsten-based transition-metal dichalcogenides (TMDCs), because of their unique spin texture and long lifetime, have attracted intense research interest. Here, we show that we can control the dark exciton electrostatically by dressing it with one free electron or free hole, forming the dark trions. The existence of the dark trions is suggested by the unique magneto-photoluminescence spectroscopy pattern of the boron nitride (BN)-encapsulated monolayer WSe₂ device at low temperature. The unambiguous evidence of the dark trions is further obtained by directly resolving the radiation pattern of the dark trions through back focal plane imaging. The darkmore »« less
https://doi.org/10.1021/acs.nanolett.9b02132

Full Text Available
Gate-Controlled Spin-Valley Locking of Resident Carriers in ${WSe}_{2}$ Monolayers

Journal Article Crooker, Scott A. ; Yang, Luyi ; Robert, Cedric ; ... - Physical Review Letters

Using time-resolved Kerr rotation, we measure the spin-valley dynamics of resident electrons and holes in single charge-tunable monolayers of the archetypal transition-metal dichalcogenide (TMD) semiconductor WSe₂. In the n-type regime, we observe long (~ 130 ns) polarization relaxation of electrons that is sensitive to in-plane magnetic fields B_y, indicating spin relaxation. In marked contrast, extraordinarily long (~ 2 μs) polarization relaxation of holes is revealed in the p-type regime, which is unaffected by B_y, directly confirming long-standing expectations of strong spin-valley locking of holes in the valence band of monolayer TMDs. Finally, supported by continuous-wave Kerr spectroscopy and Hanle measurements,more »« less
Cited by 87
https://doi.org/10.1103/PhysRevLett.119.137401

Full Text Available
Charge Transfer Dynamics in MoSe₂/hBN/WSe₂ Heterostructures

Journal Article Yoon, Yoseob ; Zhang, Zuocheng ; Qi, Ruishi ; ... - Nano Letters

Ultrafast charge transfer processes provide a facile way to create interlayer excitons in directly contacted transition metal dichalcogenide (TMD) layers. More sophisticated heterostructures composed of TMD/hBN/TMD enable new ways to control interlayer exciton properties and achieve novel exciton phenomena, such as exciton insulators and condensates, where longer lifetimes are desired. In this work, we experimentally study the charge transfer dynamics in a heterostructure composed of a 1 nm thick hBN spacer between MoSe₂ and WSe₂ monolayers. We observe the hole transfer from MoSe₂ to WSe₂ through the hBN barrier with a time constant of 500 ps, which is over 3more »« less
https://doi.org/10.1021/acs.nanolett.2c04030

Full Text Available
Dynamics and Spin-Valley Locking Effects in Monolayer Transition Metal Dichalcogenides

Journal Article Ciccarino, Christopher J. ; Christensen, Thomas ; Sundararaman, Ravishankar ; ... - Nano Letters

Transition metal dichalcogenides have been the primary materials of interest in the field of valleytronics for their potential in information storage, yet the limiting factor has been achieving long valley decoherence times. We explore the dynamics of four monolayer TMDCs (MoS₂, MoSe₂, WS₂, WSe₂) using ab initio calculations to describe electron–electron and electron–phonon interactions. By comparing calculations which both omit and include relativistic effects, we isolate the impact of spin-resolved spin–orbit coupling on transport properties. In our work, we find that spin–orbit coupling increases carrier lifetimes at the valence band edge by an order of magnitude due to spin-valley locking,more »« less
Cited by 38
https://doi.org/10.1021/acs.nanolett.8b02300

Full Text Available

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Title: Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures

Abstract

Citation Formats

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides journal, May 2012

Many-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS 2 journal, December 2013

Optically initialized robust valley-polarized holes in monolayer WSe2 journal, November 2015

Band offsets and heterostructures of two-dimensional semiconductors journal, January 2013

Ultrafast Charge Separation and Indirect Exciton Formation in a MoS 2 –MoSe 2 van der Waals Heterostructure journal, November 2014

Intervalley scattering by acoustic phonons in two-dimensional MoS2 revealed by double-resonance Raman spectroscopy journal, March 2017

Emerging Photoluminescence in Monolayer MoS2 journal, April 2010

Spin and pseudospins in layered transition metal dichalcogenides journal, April 2014

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides journal, November 2012

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides journal, March 2016

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure journal, February 2016

Gate-Variable Optical Transitions in Graphene journal, March 2008

Direct measurement of exciton valley coherence in monolayer WSe2 journal, February 2016

Valley-selective optical Stark effect in monolayer WS2 journal, December 2014

Optical excitation and control of electron spins in semiconductor quantum wells journal, April 2010

Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures journal, August 2014

One-Dimensional Electrical Contact to a Two-Dimensional Material journal, October 2013

Spin coherence of a two-dimensional electron gas induced by resonant excitation of trions and excitons in Cd Te ∕ ( Cd , Mg ) Te quantum wells journal, November 2007

Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel journal, March 1987

Atomically Thin MoS2 A New Direct-Gap Semiconductor journal, September 2010

Exciton valley dynamics probed by Kerr rotation in WSe 2 monolayers journal, October 2014

Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe 2 journal, July 2016

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2 journal, August 2015

The valley Hall effect in MoS2 transistors journal, June 2014

Valley-selective circular dichroism of monolayer molybdenum disulphide journal, January 2012

Valley Zeeman effect in elementary optical excitations of monolayer WSe2 journal, January 2015

Dirac cones and Dirac saddle points of bright excitons in monolayer transition metal dichalcogenides journal, May 2014

Exciton spin dynamics in quantum wells journal, June 1993

Infrared and polarization anomalies in the optical spectra of modulation-doped semiconductor quantum-well structures journal, February 1986

Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene journal, March 2009

Magnetic control of valley pseudospin in monolayer WSe2 journal, January 2015

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors journal, July 2013

Control of valley polarization in monolayer MoS2 by optical helicity journal, June 2012

Valley polarization in MoS2 monolayers by optical pumping journal, June 2012

Tuning layer-hybridized moiré excitons by the quantum-confined Stark effect journal, November 2020

Isospin Pomeranchuk effect in twisted bilayer graphene journal, April 2021

Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene text, January 2009

Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors text, January 2013

Valley-selective optical Stark effect in monolayer WS2 text, January 2014

Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2 text, January 2014

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2 text, January 2015

Multiphonon Raman Scattering in Transition Metal Dichalcogenide Double Layers journal, January 2020

Valleytronics: Opportunities, Challenges, and Paths Forward journal, August 2018

Thermal Engineering in Low-Dimensional Quantum Devices: A Tutorial Review of Nonequilibrium Green's Function Methods journal, April 2018

Environmental engineering of transition metal dichalcogenide optoelectronics journal, June 2018

Valleytronics in transition metal dichalcogenides materials journal, August 2019

Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures journal, February 2018

Negative circular polarization emissions from WSe2/MoSe2 commensurate heterobilayers journal, April 2018

Valley coherent exciton-polaritons in a monolayer semiconductor journal, November 2018

Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route journal, September 2019

Long valley lifetime of dark excitons in single-layer WSe2 journal, September 2019

Interlayer valley excitons in heterobilayers of transition metal dichalcogenides journal, August 2018

Generation, transport and detection of valley-locked spin photocurrent in WSe2–graphene–Bi2Se3 heterostructures journal, July 2018

Ultrafast dynamics in van der Waals heterostructures journal, November 2018

Optical initialization of a single spin-valley in charged WSe2 quantum dots journal, March 2019

Light–valley interactions in 2D semiconductors journal, July 2018

Valley optomechanics in a monolayer semiconductor journal, May 2019

Room-temperature electrical control of exciton flux in a van der Waals heterostructure journal, July 2018

Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures journal, September 2018

Carrier dynamics and spin–valley–layer effects in bilayer transition metal dichalcogenides journal, January 2019

Restoring the intrinsic optical properties of CVD-grown MoS 2 monolayers and their heterostructures journal, January 2019

Ultrafast formation and dynamics of interlayer exciton in a large-area CVD-grown WS 2 /WSe 2 heterostructure journal, November 2018

Optical control of the layer degree of freedom through Wannier–Stark states in polar 3R MoS 2 journal, May 2019

Narrow photoluminescence and Raman peaks of epitaxial MoS 2 on graphene/Ir(1 1 1) journal, November 2018

Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer journal, May 2019

Reversible crystalline-to-amorphous phase transformation in monolayer MoS 2 under grazing ion irradiation journal, January 2020

Roadmap on finding chiral valleys: screening 2D materials for valleytronics journal, June 2018

Robust circular polarization of indirect Q-K transitions in bilayer 3 R − W S 2 journal, October 2019

Strongly distinct electrical response between circular and valley polarization in bilayer transition metal dichalcogenides journal, May 2019

Theory of field-modulated spin valley orbital pseudospin physics journal, January 2020

Synthetic WSe 2 monolayers with high photoluminescence quantum yield journal, January 2019

Detection of thermodynamic “valley noise” in monolayer semiconductors: Access to intrinsic valley relaxation time scales journal, March 2019

Direct observation of valley-coupled topological current in MoS 2 journal, April 2019

Optical generation of high carrier densities in 2D semiconductor heterobilayers journal, September 2019

Imaging of pure spin-valley diffusion current in WS 2 -WSe 2 heterostructures journal, May 2018

Measuring the optical permittivity of two-dimensional materials without a priori knowledge of electronic transitions journal, September 2018

Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures text, January 2017

Title: Observation of ultralong valley lifetime in WSe₂/MoS₂ heterostructures

Coupled Spin and Valley Physics in Monolayers of ${MoS}_{2}$ and Other Group-VI Dichalcogenides
journal, May 2012

Many-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS ₂
journal, December 2013

Optically initialized robust valley-polarized holes in monolayer WSe2
journal, November 2015

Band offsets and heterostructures of two-dimensional semiconductors
journal, January 2013

Ultrafast Charge Separation and Indirect Exciton Formation in a MoS ₂ –MoSe ₂ van der Waals Heterostructure
journal, November 2014

Intervalley scattering by acoustic phonons in two-dimensional MoS2 revealed by double-resonance Raman spectroscopy
journal, March 2017

Emerging Photoluminescence in Monolayer MoS₂
journal, April 2010

Spin and pseudospins in layered transition metal dichalcogenides
journal, April 2014

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
journal, March 2016

Valley-polarized exciton dynamics in a 2D semiconductor heterostructure
journal, February 2016

Gate-Variable Optical Transitions in Graphene
journal, March 2008

Direct measurement of exciton valley coherence in monolayer WSe2
journal, February 2016

Valley-selective optical Stark effect in monolayer WS2
journal, December 2014

Optical excitation and control of electron spins in semiconductor quantum wells
journal, April 2010

Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures
journal, August 2014

One-Dimensional Electrical Contact to a Two-Dimensional Material
journal, October 2013

Spin coherence of a two-dimensional electron gas induced by resonant excitation of trions and excitons in $Cd Te ∕ (Cd, Mg) Te$ quantum wells
journal, November 2007

Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel
journal, March 1987

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Exciton valley dynamics probed by Kerr rotation in ${WSe}_{2}$ monolayers
journal, October 2014

Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe ₂
journal, July 2016

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2
journal, August 2015

The valley Hall effect in MoS2 transistors
journal, June 2014

Valley-selective circular dichroism of monolayer molybdenum disulphide
journal, January 2012

Valley Zeeman effect in elementary optical excitations of monolayer WSe2
journal, January 2015

Dirac cones and Dirac saddle points of bright excitons in monolayer transition metal dichalcogenides
journal, May 2014

Exciton spin dynamics in quantum wells
journal, June 1993

Infrared and polarization anomalies in the optical spectra of modulation-doped semiconductor quantum-well structures
journal, February 1986

Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene
journal, March 2009

Magnetic control of valley pseudospin in monolayer WSe2
journal, January 2015

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
journal, July 2013

Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012

Valley polarization in MoS2 monolayers by optical pumping
journal, June 2012

Tuning layer-hybridized moiré excitons by the quantum-confined Stark effect
journal, November 2020

Isospin Pomeranchuk effect in twisted bilayer graphene
journal, April 2021

Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
text, January 2009

Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors
text, January 2013

Valley-selective optical Stark effect in monolayer WS2
text, January 2014

Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
text, January 2014

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2
text, January 2015

Multiphonon Raman Scattering in Transition Metal Dichalcogenide Double Layers
journal, January 2020

Valleytronics: Opportunities, Challenges, and Paths Forward
journal, August 2018

Thermal Engineering in Low-Dimensional Quantum Devices: A Tutorial Review of Nonequilibrium Green's Function Methods
journal, April 2018

Environmental engineering of transition metal dichalcogenide optoelectronics
journal, June 2018

Valleytronics in transition metal dichalcogenides materials
journal, August 2019

Microsecond dark-exciton valley polarization memory in two-dimensional heterostructures
journal, February 2018

Negative circular polarization emissions from WSe2/MoSe2 commensurate heterobilayers
journal, April 2018

Valley coherent exciton-polaritons in a monolayer semiconductor
journal, November 2018

Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route
journal, September 2019

Long valley lifetime of dark excitons in single-layer WSe2
journal, September 2019

Interlayer valley excitons in heterobilayers of transition metal dichalcogenides
journal, August 2018

Generation, transport and detection of valley-locked spin photocurrent in WSe2–graphene–Bi2Se3 heterostructures
journal, July 2018

Ultrafast dynamics in van der Waals heterostructures
journal, November 2018

Optical initialization of a single spin-valley in charged WSe2 quantum dots
journal, March 2019

Light–valley interactions in 2D semiconductors
journal, July 2018

Valley optomechanics in a monolayer semiconductor
journal, May 2019

Room-temperature electrical control of exciton flux in a van der Waals heterostructure
journal, July 2018

Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures
journal, September 2018

Carrier dynamics and spin–valley–layer effects in bilayer transition metal dichalcogenides
journal, January 2019

Restoring the intrinsic optical properties of CVD-grown MoS ₂ monolayers and their heterostructures
journal, January 2019

Ultrafast formation and dynamics of interlayer exciton in a large-area CVD-grown WS ₂ /WSe ₂ heterostructure
journal, November 2018

Optical control of the layer degree of freedom through Wannier–Stark states in polar 3R MoS ₂
journal, May 2019

Narrow photoluminescence and Raman peaks of epitaxial MoS ₂ on graphene/Ir(1 1 1)
journal, November 2018

Tuning of impurity-bound interlayer complexes in a van der Waals heterobilayer
journal, May 2019

Reversible crystalline-to-amorphous phase transformation in monolayer MoS ₂ under grazing ion irradiation
journal, January 2020

Roadmap on finding chiral valleys: screening 2D materials for valleytronics
journal, June 2018

Robust circular polarization of indirect Q-K transitions in bilayer $3 R - W S_{2}$
journal, October 2019

Strongly distinct electrical response between circular and valley polarization in bilayer transition metal dichalcogenides
journal, May 2019

Theory of field-modulated spin valley orbital pseudospin physics
journal, January 2020

Synthetic WSe ₂ monolayers with high photoluminescence quantum yield
journal, January 2019

Detection of thermodynamic “valley noise” in monolayer semiconductors: Access to intrinsic valley relaxation time scales
journal, March 2019

Direct observation of valley-coupled topological current in MoS ₂
journal, April 2019

Optical generation of high carrier densities in 2D semiconductor heterobilayers
journal, September 2019

Imaging of pure spin-valley diffusion current in WS ₂ -WSe ₂ heterostructures
journal, May 2018

Measuring the optical permittivity of two-dimensional materials without a priori knowledge of electronic transitions
journal, September 2018

Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures
text, January 2017

Thermal engineering in low-dimensional quantum devices: a tutorial review of nonequilibrium Green's function methods
text, January 2018

Valley coherent exciton-polaritons in a monolayer semiconductor
text, January 2018