Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate
Abstract
We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [$$\overline{1}2\overline{1}$$]CdTe//[$$\overline{1}100$$]CdS//[010]mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.
- Authors:
-
- Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems
- Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Electrical, Computer and Systems Engineering
- Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Materials Science and Engineering
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1376144
- Alternate Identifier(s):
- OSTI ID: 1419405
- Report Number(s):
- BNL-114085-2017-JA
Journal ID: ISSN 0169-4332; R&D Project: 16060; 16060; KC0403020
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Surface Science
- Additional Journal Information:
- Journal Volume: 413; Journal Issue: C; Journal ID: ISSN 0169-4332
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Heteroepitaxy; CdTe; van der Waals; RHEED; Photoresponse
Citation Formats
Yang, Y. -B., Seewald, L., Mohanty, Dibyajyoti, Wang, Y., Zhang, L. H., Kisslinger, K., Xie, Weiyu, Shi, J., Bhat, I., Zhang, Shengbai, Lu, T. -M., and Wang, G. -C. Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate. United States: N. p., 2017.
Web. doi:10.1016/j.apsusc.2017.03.260.
Yang, Y. -B., Seewald, L., Mohanty, Dibyajyoti, Wang, Y., Zhang, L. H., Kisslinger, K., Xie, Weiyu, Shi, J., Bhat, I., Zhang, Shengbai, Lu, T. -M., & Wang, G. -C. Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate. United States. https://doi.org/10.1016/j.apsusc.2017.03.260
Yang, Y. -B., Seewald, L., Mohanty, Dibyajyoti, Wang, Y., Zhang, L. H., Kisslinger, K., Xie, Weiyu, Shi, J., Bhat, I., Zhang, Shengbai, Lu, T. -M., and Wang, G. -C. Fri .
"Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate". United States. https://doi.org/10.1016/j.apsusc.2017.03.260. https://www.osti.gov/servlets/purl/1376144.
@article{osti_1376144,
title = {Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate},
author = {Yang, Y. -B. and Seewald, L. and Mohanty, Dibyajyoti and Wang, Y. and Zhang, L. H. and Kisslinger, K. and Xie, Weiyu and Shi, J. and Bhat, I. and Zhang, Shengbai and Lu, T. -M. and Wang, G. -C.},
abstractNote = {We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [$\overline{1}2\overline{1}$]CdTe//[$\overline{1}100$]CdS//[010]mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.},
doi = {10.1016/j.apsusc.2017.03.260},
journal = {Applied Surface Science},
number = C,
volume = 413,
place = {United States},
year = {Fri Mar 31 00:00:00 EDT 2017},
month = {Fri Mar 31 00:00:00 EDT 2017}
}
Web of Science
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Works referencing / citing this record:
Ultrahigh‐Detectivity Photodetectors with Van der Waals Epitaxial CdTe Single‐Crystalline Films
journal, April 2019
- Lian, Qin; Zhu, Xuanting; Wang, Xudong
- Small, Vol. 15, Issue 17