Evolution of small defect clusters in ion-irradiated 3C-SiC: Combined cluster dynamics modeling and experimental study
Abstract
Distribution of black spot defects and small clusters in 1 MeV krypton irradiated 3C-SiC has been investigated using advanced scanning transmission electron microscopy (STEM) and TEM. We find that two thirds of clusters smaller than 1 nm identified in STEM are invisible in TEM images. For clusters that are larger than 1 nm, STEM and TEM results match very well. A cluster dynamics model has been developed for SiC to reveal processes that contribute to evolution of defect clusters and validated against the (S)TEM results. Simulations showed that a model based on established properties of point defects (PDs) generation, reaction, clustering, and cluster dissociation, is unable to predict black spot defects distribution consistent with STEM observations. This failure suggests that additional phenomena not included in a simple point-defect picture may contribute to radiation-induced evolution of defect clusters in SiC and using our model we have determined the effects of a number of these additional phenomena on cluster evolution. Using these additional phenomena it is possible to fit parameters within physically justifiable ranges that yield agreement between cluster distributions predicted by simulations and those measured experimentally.
- Authors:
-
- Univ. of Wisconsin, Madison, WI (United States). Dept. of Engineering Physics
- Univ. of Wisconsin, Madison, WI (United States). Dept. of Material Science and Engineering
- Univ. of Wisconsin, Madison, WI (United States). Dept. of Engineering Physics. Dept. of Material Science and Engineering
- Publication Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Org.:
- USDOE Office of Nuclear Energy (NE)
- OSTI Identifier:
- 1533462
- Alternate Identifier(s):
- OSTI ID: 1419131
- Grant/Contract Number:
- NE0008418
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Acta Materialia
- Additional Journal Information:
- Journal Volume: 125; Journal ID: ISSN 1359-6454
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; silicon carbide; black spot defects; cluster dynamics; STEM; TEM; size distribution
Citation Formats
Liu, C., He, L., Zhai, Y., Tyburska-Püschel, B., Voyles, P. M., Sridharan, K., Morgan, D., and Szlufarska, I. Evolution of small defect clusters in ion-irradiated 3C-SiC: Combined cluster dynamics modeling and experimental study. United States: N. p., 2016.
Web. doi:10.1016/j.actamat.2016.12.020.
Liu, C., He, L., Zhai, Y., Tyburska-Püschel, B., Voyles, P. M., Sridharan, K., Morgan, D., & Szlufarska, I. Evolution of small defect clusters in ion-irradiated 3C-SiC: Combined cluster dynamics modeling and experimental study. United States. https://doi.org/10.1016/j.actamat.2016.12.020
Liu, C., He, L., Zhai, Y., Tyburska-Püschel, B., Voyles, P. M., Sridharan, K., Morgan, D., and Szlufarska, I. Mon .
"Evolution of small defect clusters in ion-irradiated 3C-SiC: Combined cluster dynamics modeling and experimental study". United States. https://doi.org/10.1016/j.actamat.2016.12.020. https://www.osti.gov/servlets/purl/1533462.
@article{osti_1533462,
title = {Evolution of small defect clusters in ion-irradiated 3C-SiC: Combined cluster dynamics modeling and experimental study},
author = {Liu, C. and He, L. and Zhai, Y. and Tyburska-Püschel, B. and Voyles, P. M. and Sridharan, K. and Morgan, D. and Szlufarska, I.},
abstractNote = {Distribution of black spot defects and small clusters in 1 MeV krypton irradiated 3C-SiC has been investigated using advanced scanning transmission electron microscopy (STEM) and TEM. We find that two thirds of clusters smaller than 1 nm identified in STEM are invisible in TEM images. For clusters that are larger than 1 nm, STEM and TEM results match very well. A cluster dynamics model has been developed for SiC to reveal processes that contribute to evolution of defect clusters and validated against the (S)TEM results. Simulations showed that a model based on established properties of point defects (PDs) generation, reaction, clustering, and cluster dissociation, is unable to predict black spot defects distribution consistent with STEM observations. This failure suggests that additional phenomena not included in a simple point-defect picture may contribute to radiation-induced evolution of defect clusters in SiC and using our model we have determined the effects of a number of these additional phenomena on cluster evolution. Using these additional phenomena it is possible to fit parameters within physically justifiable ranges that yield agreement between cluster distributions predicted by simulations and those measured experimentally.},
doi = {10.1016/j.actamat.2016.12.020},
journal = {Acta Materialia},
number = ,
volume = 125,
place = {United States},
year = {Mon Dec 19 00:00:00 EST 2016},
month = {Mon Dec 19 00:00:00 EST 2016}
}
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